参数资料
型号: W9425G6DH-6F
厂商: WINBOND ELECTRONICS CORP
元件分类: DRAM
英文描述: 16M X 16 DDR DRAM, 0.7 ns, PDSO66
封装: 0.400 INCH, 0.65 MM PITCH, ROHS COMPLIANT, TSOP2-66
文件页数: 17/53页
文件大小: 1817K
代理商: W9425G6DH-6F
W9425G6DH
Publication Release Date:Feb. 12, 2008
- 24 -
Revision A8
9.3 Capacitance
(VDD = VDDQ = 2.5V
±0.2V, f = 1 MHz, TA = 25 °C, VOUT (DC) = VDDQ/2, VOUT (Peak to Peak) = 0.2V)
SYMBOL
PARAMETER
MIN.
MAX.
DELTA
(MAX.)
UNIT
CIN
Input Capacitance (except for CLK pins)
2.0
3.0
0.5
pF
CCLK
Input Capacitance (CLK pins)
2.0
3.0
0.25
pF
CI/O
DQ, DQS, DM Capacitance
4.0
5.0
0.5
pF
CNC
NC Pin Capacitance
-
1.5
-
pF
Notes: These parameters are periodically sampled and not 100% tested.
9.4 Leakage and Output Buffer Characteristics
SYMBOL
PARAMETER
MIN.
MAX.
UNIT NOTES
II (L)
Input Leakage Current
(0V < VIN < VDDQ, All other pins not under test = 0V)
-2
2
A
IO (L)
Output Leakage Current
(Output disabled, 0V < VOUT < VDDQ)
-5
5
A
VOH
Output High Voltage
(under AC test load condition)
VTT +0.76
-
V
VOL
Output Low Voltage
(under AC test load condition)
-
VTT -0.76
V
IOH (DC)
Output Minimum Source DC Current
-15.2
-
mA
4, 6
IOL (DC)
Output Minimum Sink DC Current
Full
Strength
15.2
-
mA
4, 6
IOH (DC)
Output Minimum Source DC Current
-10.4
-
mA
5
IOL (DC)
Output Minimum Sink DC Current
Half
Strength
10.4
-
mA
5
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