参数资料
型号: W987Y6CBG80
厂商: WINBOND ELECTRONICS CORP
元件分类: DRAM
英文描述: 8M X 16 SYNCHRONOUS DRAM, 6 ns, PBGA54
封装: 8 X 9 MM, 1.20 MM HEIGHT, FBGA-54
文件页数: 10/46页
文件大小: 1634K
代理商: W987Y6CBG80
Preliminary W987Y6CB
- 18 -
Address sequence of Sequential mode
A column access is performed by incrementing the column address input to the device. The
address is varied by the Burst Length as the following.
Addressing Sequence of Sequential Mode
DATA
ACCESS ADDRESS
BURST LENGTH
Data 0
n
2 words (address bits is A0)
Data 1
n + 1
No carried from A0 to A1
Data 2
n + 2
4 words (address bit A0, A1)
Data 3
n + 3
Not carried from A1 to A2
Data 4
n + 4
Data 5
n + 5
8 words(address bits A2, A1 and A0)
Data 6
n + 6
Not carried from A2 to A3
Data 7
n + 7
Addressing sequence of Interleave mode
A Column access is started from the inputted column address and is performed by
interleaving the address bits in the sequence shown as the following.
Address Sequence for Interleave Mode
DATA
ACCESS ADDRESS
BURST LENGTH
Data 0
A8 A7 A6 A5 A4 A3 A2 A1 A0
2 words
Data 1
A8 A7 A6 A5 A4 A3 A2 A1 A0
Data 2
A8 A7 A6 A5 A4 A3 A2 A1 A0
4 words
Data 3
A8 A7 A6 A5 A4 A3 A2 A1 A0
Data 4
A8 A7 A6 A5 A4 A3 A2 A1 A0
8 words
Data 5
A8 A7 A6 A5 A4 A3 A2 A1 A0
Data 6
A8 A7 A6 A5 A4 A3 A2 A1 A0
Data 7
A8 A7 A6 A5 A4 A3 A2 A1 A0
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