参数资料
型号: WED3DL328V10BC
厂商: MICROSEMI CORP-PMG MICROELECTRONICS
元件分类: DRAM
英文描述: 8M X 32 SYNCHRONOUS DRAM, 7 ns, PBGA119
封装: 14 X 22 MM, MO-163, BGA-119
文件页数: 21/27页
文件大小: 1195K
代理商: WED3DL328V10BC
3
White Electronic Designs Corporation (602) 437-1520 www.wedc.com
White Electronic Designs
WED3DL328V
June, 2002
Rev. 1
White Electronic Designs Corp. reserves the right to change products or specications without notice.
INPUT/OUTPUT FUNCTIONAL DESCRIPTION
RECOMMENDED DC OPERATING CONDITIONS
(Voltage Referenced to: VSS = 0V, 0°C ≤ TA ≤ 70°C)
ABSOLUTE MAXIMUM RATINGS*
Parameter
Symbol
Min Typ
Max
Unit
Supply Voltage
VCC/VCCQ
3.0
3.3
3.6
V
Input High Voltage
VIH
2.0
3.0
VCC +0.3
V
Input Low Voltage
VIL
-0.3
0.8
V
Output High Voltage (IOH = -2mA)
VOH
2.4
V
Output Low Voltage (IOL = 2mA)
VOL
0.4
V
Input Leakage Voltage
IIL
-5
5
A
Output Leakage Voltage
IOL
-5
5
A
CAPACITANCE
(TA = 25°C, f = 1MHZ, VDD = 3.3V)
Parameter
Symbol
Min
Max
Units
Power Supply Voltage
VCC/VCCQ
-1.0
+4.6
V
Input Voltage
VIN
-1.0
+4.6
V
Output Voltage
VOUT
-1.0
+4.6
V
Operating Temperature
tOPR
-0
+70
°C
Storage Temperature
tSTG
-55
+125
°C
Power Dissipation
PD
1.5
W
Short Circuit Output Current
IOS
50
mA
*Stress greater than those listed under “Absolute Maximum Ratings” may cause
permanent damage to the device. This is a stress rating only and functional operation of
the device at these or any other conditions greater than those indicated in the operational
sections of this specication is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect reliability.
Parameter
Symbol Max Unit
Input Capacitance
CI1
4
pF
Input/Output Capacitance (DQ)
COUT
5
pF
Symbol
Type
Signal
Polarity
Function
CK
Input
Pulse Positive Edge The system clock input. All of the SDRAM inputs are sampled on the rising edge of the clock.
CKE
Input
Level
Active High
Activates the CK signal when high and deactivates the CK signal when low. By deactivating the clock, CKE low initiates
the Power Down mode, Suspend mode, or the Self Refresh mode.
CE#
Input
Pulse
Active Low
CE# disable or enable device operation by masking or enabling all inputs except CK, CKE and DQM.
RAS#, CAS#
WE#
Input
Pulse
Active Low
When sampled at the positive rising edge of the clock, CAS#, RAS#, and WE# dene the operation to be
executed by the SDRAM.
BA0,BA1
Input
Level
Selects which SDRAM bank is to be active.
A0-11,
A10/AP
Input
Level
During a Bank Activate command cycle, A0-11 denes the row address (RA0-11) when sampled at the rising clock edge.
During a Read or Write command cycle, A0-8 denes the column address (CA0-8) when sampled at the rising
clock edge. In addition to the row address, A10/AP is used to invoke Autoprecharge operation at the end of the
Burst Read or Write cycle. If A10/AP is high, autoprecharge is selected and BA0, BA1 denes the bank to be
precharged . If A10/AP is low, autoprecharge is disabled.
During a Precharge command cycle, A10/AP is used in conjunction with BA0, BA1 to control which
bank(s) to precharge. If A10/AP is high, all banks will be precharged regardless of the state of BA0,
BA1. If A10/AP is low, then BA0, BA1 is used to dene which bank to precharge.
DQ
Input/Output Level
Data Input/Output are multiplexed on the same pins
DQM
Input
Pulse
Mask
The Data Input/Output mask places the DQ buffers in a high impedance state when sampled high. In
Read mode, DQM has a latency of two clock cycles and controls the output buffers like an output enable. In Write
Active High mode, DQM has a latency of zero and operates as a word mask by allowing input data
to be written if it is low but blocks the Write operation if DQM is high.
VCC, VSS
Supply
Power and ground for the input buffers and the core logic.
VCCQ
Supply
Isolated power and ground for the output buffers to improve noise immunity.
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