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参数资料
| 型号： | WEDPN8M72V-125BI |
| 厂商： | MICROSEMI CORP-PMG MICROELECTRONICS |
| 元件分类： | DRAM |
| 英文描述： | 8M X 72 SYNCHRONOUS DRAM MODULE, 6 ns, PBGA219 |
| 封装： | 32 X 25 MM, PLASTIC, BGA-219 |
| 文件页数： | 15/15页 |
| 文件大小： | 188K |
| 代理商： | WEDPN8M72V-125BI |
9
White Electronic Designs Corporation (602) 437-1520 www.whiteedc.com
WEDPN8M72V-XBX
DC ELECTRICAL CHARACTERISTICS AND OPERATING CONDITIONS (NOTES 1, 6)
(VCC = +3.3V ±0.3V; TA = -55°C TO +125°C)
Parameter/Condition
Symbol
Units
Min
Max
Supply Voltage
VCC
33.6
V
Input High Voltage: Logic 1; All inputs (21)
VIH
2VCC + 0.3
V
Input Low Voltage: Logic 0; All inputs (21)
VIL
-0.3
0.8
V
Input Leakage Current: Any input 0V - VIN - VCC(All other pins not under test = 0V)
II
-5
5
A
Input Leakage Address Current (All other pins not under test = 0V)
II
-25
25
A
Output Leakage Current: I/Os are disabled; 0V - VOUT - VCC
IOZ
-5
5
A
Output Levels:
Output High Voltage (IOUT = -4mA)
VOH
2.4
–
V
Output Low Voltage (IOUT = 4mA)
VOL
–
0.4
V
ABSOLUTE MAXIMUM RATINGS
Parameter
Unit
Voltage on VDD, VDDQ Supply relative to Vss
-1 to 4.6
V
Voltage on NC or I/O pins relative to Vss
-1 to 4.6
V
Operating Temperature TA (Mil)
-55 to +125
°C
Operating Temperature TA (Ind)
-40 to +85
°C
Storage Temperature, Plastic
-55 to +150
°C
NOTE:
Stress greater than those listed under "Absolute Maximum Ratings" may cause
permanent damage to the device. This is a stress rating only and functional
operation of the device at these or any other conditions greater than those
indicated in the operational sections of this specification is not implied.
Exposure to absolute maximum rating conditions for extended periods may
affect reliability.
CAPACITANCE (NOTE 2)
Parameter
Symbol
Max
Unit
Input Capacitance: CLK
CI1
10
pF
Addresses, BA0-1 Input Capacitance
CA
30
pF
InputCapacitance:Allotherinput-onlypins
CI2
10
pF
Input/Output Capacitance: I/Os
CIO
12
pF
ICC SPECIFICATIONS AND CONDITIONS (NOTES 1,6,11,13)
(VCC = +3.3V ±0.3V; TA = -55°C TO +125°C)
Parameter/Condition
Symbol
Max
Units
Operating Current: Active Mode;
ICC1
750
mA
Burst = 2; Read or Write; tRC = tRC (min); CAS latency = 3 (3, 18, 19)
Standby Current: Active Mode; CKE = HIGH; CS = HIGH;
ICC3
250
mA
All banks active after tRCD met; No accesses in progress (3, 12, 19)
Operating Current: Burst Mode; Continuous burst;
ICC4
750
mA
Read or Write; All banks active; CAS latency = 3 (3, 18, 19)
Self Refresh Current: CKE - 0.2V (27)
ICC7
10
mA
* Self refresh available in commercial and industrial temperatures only.
required for the completion of any internal refresh in
progress.
Upon exiting the self refresh mode, AUTO REFRESH com-
mands must be issued as both SELF REFRESH and AUTO
REFRESH utilize the row refresh counter.
BGA THERMAL RESISTANCE
Description
Symbol
Max
Unit
Notes
Junction to Ambient (No Airflow)
Theta JA
14.6
C/W
1
Junction to Ball
Theta JB
10.6
C/W
1
Junction to Case (Top)
Theta JC
4.0
C/W
1
NOTE:
Refer to AN #0001 at www.whiteedc.com in the application notes section for
modeling conditions.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| WEDPN8M72V-125BM | 制造商:未知厂家 制造商全称:未知厂家 功能描述:x72 SDRAM Module |
| WEDPN8M72V-133B2C | 制造商:WEDC 制造商全称:White Electronic Designs Corporation 功能描述:8Mx72 Synchronous DRAM |
| WEDPN8M72V-133B2I | 制造商:WEDC 制造商全称:White Electronic Designs Corporation 功能描述:8Mx72 Synchronous DRAM |
| WEDPN8M72V-133B2M | 制造商:WEDC 制造商全称:White Electronic Designs Corporation 功能描述:8Mx72 Synchronous DRAM |
| WEDPN8M72V-133BC | 制造商:Microsemi Corporation 功能描述:8M X 72 SDRAM MODULE, 3.3V, 133 MHZ, 219 PBGA 25MM X 35MM, C - Bulk |
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