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| 型号： | WPB4002 |
| 厂商： | ON Semiconductor |
| 文件页数： | 1/5页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 600V 23A TO3PB |
| 标准包装： | 100 |
| FET 型： | 2 个 N 沟道（双） |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 600V |
| 电流 - 连续漏极(Id) @ 25° C： | 23A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 360 毫欧 @ 11.5A，10V |
| Id 时的 Vgs(th)（最大）： | 5V @ 1mA |
| 闸电荷(Qg) @ Vgs： | 84nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 2200pF @ 30V |
| 功率 - 最大： | 2.5W |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-3P-3，SC-65-3 |
| 供应商设备封装： | TO-3PB |
| 包装： | 托盘 |
Ordering number : ENA1769A
WPB4002
N-Channel Power MOSFET
600V, 23A, 0.36 Ω , TO-3P-3L
Features
http://onsemi.com
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Reverse recovery time trr=115ns (typ)
Input capacitance Ciss=2200pF (typ)
ON-resistance RDS(on)=0.28 Ω (typ)
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10V drive
TO-3P-3L
Speci ? cations
Absolute Maximum Ratings at Ta=25°C
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current (DC)
Symbol
VDSS
VGSS
ID
Conditions
Ratings
600
±30
23
Unit
V
V
A
Drain Current (Pulse)
Source to Drain Diode Forward Current (DC)
Source to Drain Diode Forward Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
Avalanche Energy (Single Pulse) *1
Avalanche Current *2
IDP
ISD
ISDP
PD
Tch
Tstg
EAS
IAV
PW ≤ 10 μ s, duty cycle ≤ 1%
PW ≤ 10 μ s, duty cycle ≤ 1%
Tc=25 ° C
80
23
80
2.5
220
150
--55 to +150
157
17
A
A
A
W
W
° C
° C
mJ
A
Note : * 1 VDD=50V, L=1mH, IAV=17A (Fig.1)
* 2 L ≤ 1mH, single pulse
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Conditions
min
Ratings
typ
max
Unit
Drain to Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate to Source Leakage Current
V(BR)DSS
IDSS
IGSS
ID=10mA, VGS=0V
VDS= 480 V, VGS=0V
VGS=±30V, VDS=0V
600
100
±100
V
μ A
nA
Cutoff Voltage
Forward Transfer Admittance
VGS(off)
| yfs |
VDS=10V, ID=1mA
VDS=10V, ID= 11.5 A
3
7.5
15
5
V
S
Static Drain to Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain “Miller” Charge
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
RDS(on)
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
trr
Qrr
ID= 11.5 A, VGS=10V
VDS=30V, f=1MHz
See Fig.2
VDS=200V, VGS=10V, ID=23A
IS=23A, VGS=0V
See Fig.3
ISD=23A, VGS=0V, di/dt=100A/ μ s
0.28
2200
400
83
42
130
234
84
84
15.2
45.4
1.1
115
340
0.36
1.5
Ω
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
nC
ORDERING INFORMATION
See detailed ordering and shipping information on page 4 of this data sheet.
Semiconductor Components Industries, LLC, 2013
August, 2013
82813 TKIM TC-00002977/60910QB TK IM TC-00002373 No. A1769-1/5
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