参数资料
型号: WS57C191C-25J
厂商: STMICROELECTRONICS
元件分类: PROM
英文描述: 2K X 8 OTPROM, 25 ns, PQCC28
封装: PLASTIC, LDCC-28
文件页数: 4/7页
文件大小: 54K
代理商: WS57C191C-25J
WS57C191C/291C
2-10
SYMBOL
PARAMETER
CONDITIONS
TYP(5)
MAX
UNITS
CIN
Input Capacitance
VIN = 0V
4
6
pF
COUT
Output Capacitance
VOUT = 0V
8
12
pF
CVPP
VPP Capacitance
VPP = 0 V
18
25
pF
CAPACITANCE(4) T
A = 25 °C, f = 1 MHz
30 pF
(INCLUDING SCOPE
AND JIG
CAPACITANCE)
98
2.01 V
D.U.T.
A.C. TESTING INPUT/OUTPUT WAVEFORM
TEST LOAD (High Impedance Test Systems)
3.0
0.0
1.5
TEST
POINTS
NOTE: 6. Provide adequate decoupling capacitance as close as possible to this device to achieve the published A.C. and D.C. parameters.
A 0.1 microfarad capacitor in parallel with a 0.01 microfarad capacitor connected between VCC and ground is recommended.
Inadequate decoupling may result in access time degradation or other transient performance failures.
NOTES: 4. This parameter is only sampled and is not 100% tested.
5.Typical values are for TA = 25°C and nominal supply voltages.
A.C. testing inputs are driven at 3.0 V for a logic "1" and 0.0 V for a
logic "0." Timing measurements are made at 1.5 V for input and
output transitions in both directions.
相关PDF资料
PDF描述
WS1M32-85G3CA 1M X 32 MULTI DEVICE SRAM MODULE, 85 ns, CQFP84
W29C040T-90N 512K X 8 FLASH 5V PROM, 90 ns, PDSO32
WED2ZL361MS26BC 1M X 36 ZBT SRAM, 2.6 ns, PBGA119
W3E32M72S-266BC 32M X 72 DDR DRAM, 0.75 ns, PBGA219
W3HG128M72AEF665F1MCG DDR DRAM MODULE, DMA240
相关代理商/技术参数
参数描述
WS57C191C-25P 制造商:WSI 功能描述:
WS57C191C-35 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:HIGH SPEED 2K x 8 CMOS PROM/RPROM
WS57C191C-35D 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:HIGH SPEED 2K x 8 CMOS PROM/RPROM
WS57C191C-35DMB 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:MILITARY HIGH SPEED 2K x 8 CMOS PROM/RPROM
WS57C191C-35J 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:HIGH SPEED 2K x 8 CMOS PROM/RPROM