参数资料
型号: WS57C191C-25J
厂商: STMICROELECTRONICS
元件分类: PROM
英文描述: 2K X 8 OTPROM, 25 ns, PQCC28
封装: PLASTIC, LDCC-28
文件页数: 6/7页
文件大小: 54K
代理商: WS57C191C-25J
PROGRAMMING INFORMATION
DC CHARACTERISTICS (T
A = 25 ± 5°C, VCC = 6.25 V ± 0.25 V, VPP = 12.75 ± 0.25 V)
SYMBOLS
PARAMETER
MIN
MAX
UNITS
ILI
Input Leakage Current
–10
10
A
(VIN = VCC or Gnd)
IPP
VPP Supply Current During
60
mA
Programming Pulse
ICC
VCC Supply Current
25
mA
VOL
Output Low Voltage During Verify
0.45
V
(IOL = 16 mA)
VOH
Output High Voltage During Verify
2.4
V
(IOH = –4 mA)
WS57C191C/291C
2-12
SYMBOLS
PARAMETER
MIN
TYP
MAX
UNITS
tAS
Address Setup Time
2
s
tDF
Chip Disable Setup Time
30
ns
tDS
Data Setup Time
2
s
tPW
Program Pulse Width
100
200
s
tDH
Data Hold Time
2
s
tCS
Chip Select Delay
30
ns
tRF
VPP Rise and Fall Time
1
s
NOTES: 8. VPP must not be greater than 13 volts including overshoot.
AC CHARACTERISTICS (T
A = 25 ± 5°C, VCC = 6.25 V ± 0.25 V, VPP = 12.75 ± 0.25 V)
PROGRAMMING WAVEFORM
ADDRESS STABLE
ADDRESSES
VIH
VIL
VPP
VIH
VIL
CS1/VPP
DATA
tAS
tDF
tDS
tPW
tDH
tCS
tRF
DATA OUT
DATA IN
DON'T CARE
CS2/CS3
VIH
VIL
相关PDF资料
PDF描述
WS1M32-85G3CA 1M X 32 MULTI DEVICE SRAM MODULE, 85 ns, CQFP84
W29C040T-90N 512K X 8 FLASH 5V PROM, 90 ns, PDSO32
WED2ZL361MS26BC 1M X 36 ZBT SRAM, 2.6 ns, PBGA119
W3E32M72S-266BC 32M X 72 DDR DRAM, 0.75 ns, PBGA219
W3HG128M72AEF665F1MCG DDR DRAM MODULE, DMA240
相关代理商/技术参数
参数描述
WS57C191C-25P 制造商:WSI 功能描述:
WS57C191C-35 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:HIGH SPEED 2K x 8 CMOS PROM/RPROM
WS57C191C-35D 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:HIGH SPEED 2K x 8 CMOS PROM/RPROM
WS57C191C-35DMB 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:MILITARY HIGH SPEED 2K x 8 CMOS PROM/RPROM
WS57C191C-35J 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:HIGH SPEED 2K x 8 CMOS PROM/RPROM