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参数资料
| 型号： | X4C105 |
| 厂商： | Intersil Corporation |
| 元件分类： | CPU监测 |
| 英文描述： | RTC Module With CPU Supervisor |
| 中文描述： | 时钟模块CPU监控 |
| 文件页数： | 10/19页 |
| 文件大小： | 296K |
| 代理商： | X4C105 |
10
FN8124.0
March 18, 2005
ABSOLUTE MAXIMUM RATINGS
Temperature under bias....................-65°C to +135°C
Storage temperature .........................-65°C to +150°C
Voltage on any pin with
respect to ground.................................-1.0V to 7.0V
DC output current................................................5 mA
Lead temperature (soldering, 10 seconds)........ 300°C
COMMENT
Stresses above those listed under “Absolute Maximum
Ratings” may cause permanent damage to the device.
This is a stress rating only; the functional operation of
the device (at these or any other conditions above
those indicated in the operational sections of this specifi-
cation) is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability.
DC OPERATING CHARACTERISTICS
V
CC
= 3.0 to 3.6V at -40
°
C to +85
°
C unless otherwise specified.
Notes: (1) The device enters the active state after any start, and remains active until: 9 clock cycles later if the device select bits in the slave
address byte are incorrect; 200ns after a stop ending a read operation; or t
WC
after a stop ending a write operation.
(2) The device goes into standby: 200ns after any stop, except those that initiate a high voltage write cycle; t
WC
after a stop that initiates a
high voltage cycle; or 9 clock cycles after any start that is not followed by the correct device select bits in the slave address byte.
(3) V
IL
min. and V
IH
max. are for reference only and are not tested.
Symbol
I
CC1(1)
Parameter
Min.
Max.
2.0
Unit
mA
Test Conditions
Active supply current serial
read or serial write (does
not include the nonvolatile
store operation)
Average active supply
current during serial non-
volatile store operation
V
IL
= V
CC
x 0.1, V
IH
= V
CC
x 0.9, f
SCL
= 400kHz,
SDA = Read/Write Operation, CE, OE, WE,
D0-D3 = V
IH
; O0-O3, RESET = Open CAP is
tied to V
CC
; V
CC
> V
TRIP
V
IL
= V
CC
x 0.1, V
IH
= V
CC
x 0.9, SCL,
SDA = V
IH
; WP, S1, S2 = V
IL
, CE, OE, WE,
D0-D3 = V
IH
; O0-O3, RESET = Open CAP is tied
to V
CC
. Test during the N.V. write cycle.
V
IL
= V
CC
x 0.1, V
IH
= V
CC
x 0.9, SCL,
SDA = V
IH
; WP, S1, S2 = V
IL
, WE = V
IH
; CE,
OE = V
IL
,
D0-D3, O0-O3, RESET = Open CAP is
tied to V
CC
; V
CC
> V
TRIP
V
IL
= V
CC
x 0.1, V
IH
= V
CC
x 0.9, SCL,
SDA = V
IH
; WP, S1, S2 =V
IL
,
OE = V
IH
; CE,
WE = V
IL
,
D0-D3 = V
IL
or V
IH
, O0-O3,
RESET = Open CAP is tied to V
CC
; V
CC
> V
TRIP
V
IL
= V
CC
x 0.1, V
IH
= V
CC
x 0.9, SCL, SDA, V
IH
;
WP, S1, S2 = V
IL
,
WE, CE, OE = V
IH
;
D0-D3, O0-O3, RESET = Open CAP is tied to
V
CC,
V
CC
< V
TRIP
for Store; V
CC
> V
TRIP
for Re-
call
V
IL
= V
CC
x 0.1, V
IH
= V
CC
x 0.9, SCL, SDA, CE,
WE, OE, D0-D3, = V
IH
, WP = V
IL
,
O0-O3,
RESET = Open; CAP is tied to V
CC
V
IN
= GND to V
CC
V
SDA
= GND to V
CC;
Device is in Standby
(2)
I
CC2(1)
3.0
mA
I
CC3(1)
Active supply current
volatile NOVRAM read
3.0
mA
I
CC4(1)
Active supply current
volatile NOVRAM write
3.0
mA
I
CC5(1)
Average active supply
current over NOVRAM
store, or active current dur-
ing recall
3.0
mA
I
SB1(1)
Standby current
50
μ
A
I
LI
I
LO
V
IL(3)
V
IH(3
V
HYS
Input leakage current
Output leakage current
Input LOW voltage
Input HIGH voltage
Schmitt trigger input
hysteresis
Output LOW voltage
Output HIGH voltage
10
10
μ
A
μ
A
V
V
V
-0.5
V
CC
x 0.3
V
CC
+ 0.5
V
CC
x 0.7
.05 x V
CC
V
OL
V
OH
0.4
V
V
I
OL
= 2.0mA, V
CC
= 3.3V
I
OH
= -1mA, V
CC
= 3.3V
V
CC
- 0.4
X4C105
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