参数资料
| 型号： | X4C105V20I |
| 厂商： | Intersil |
| 文件页数： | 12/14页 |
| 文件大小： | 0K |
| 描述： | IC SUPERVISOR NOVRAM/EE 20-TSSOP |
| 标准包装： | 75 |
| 类型： | 简单复位/加电复位 |
| 监视电压数目： | 1 |
| 输出： | 开路漏极或开路集电极 |
| 复位： | 低有效 |
| 复位超时： | 最小为 100 ms |
| 电压 - 阀值： | 2.875V |
| 工作温度： | -40°C ~ 85°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 20-TSSOP（0.173"，4.40mm 宽） |
| 供应商设备封装： | 20-TSSOP |
| 包装： | 管件 |
X4C105
Electrical Specifications
V CC = 3.0V to 3.6V, T A = -40°C to +85°C. Parameters with MIN and/or MAX limits are 100% tested at +25°C,
unless otherwise specified. Temperature limits established by characterization and are not production
tested. (Continued)
SYMBOL
PARAMETER
MIN
MAX
UNIT
t CW
t CE
t CH
t WP
t WP1
t WPH
t DS
t DH
t NDO
Chip Enable to End of Write Input
Write Set-up time
Write Hold Time
Write Pulse Width
Write Pulse Width
Write Pulse HIGH Recovery Time
Data Set-up to End of Write
Data Hold Time
New Data Output
50
0
0
50
100
50
40
0
50
ns
ns
ns
ns
ns
ns
ns
ns
ns
t SOE (Note 8) OE Set-up Prior to Operation In 2-wire Mode
t HOE (Note 8) OE Hold Following Operation in 2-wire Mode
100
100
ms
ms
t WZ
t OW
Write Enable to Output in HIGH-Z
Output Active From End of Write
0
50
ns
ns
t CHZ (Note 8) Chip Disable to Output in High Z
t OHZ (Note 8) Output Disable to Output in High Z
0
0
50
50
ns
ns
NOTE:
8. t LZ and t OLZ min.; t SOE and t HOE min; and t HZ and t OHZ are periodically sampled and not 100% tested. t HZ max and t OHZ max are measured, with
CL = 5pF, from the point when CE or OE return high (whichever occurs first) to the time when the outputs are no longer driven.
NOVRAM WE Controlled Write Cycle
OE
t OES
t CH
t CW
CE
WE
t CE
t WP
t OEH
t WPH
t WC
t DS
t DH
D0-D3
(DATA I/O)
DATA VALID
t NDO
O0-O3
(DATA OUT)
12
PREVIOUS VALID DATA
NEW VALID DATA
FN8124.2
July 3, 2008
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相关代理商/技术参数 |
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|---|---|
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