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参数资料
| 型号： | Y100N10E |
| 厂商： | Motorola, Inc. |
| 英文描述： | TMOS POWER FET 100 AMPERES 100 VOLTS RDS(on) = 0.011 OHM |
| 中文描述： | TMOS是功率场效应晶体管100安培100伏特的RDS（on）\u003d 0.011欧姆 |
| 文件页数： | 2/8页 |
| 文件大小： | 216K |
| 代理商： | Y100N10E |
MTY100N10E
2
Motorola TMOS Power MOSFET Transistor Device Data
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain–Source Breakdown Voltage
(VGS = 0, ID = 250 A)
Temperature Coefficient (Positive)
V(BR)DSS
100
—
115
—
Vdc
mV/
°C
Zero Gate Voltage Drain Current
(VDS = 100 Vdc, VGS = 0 Vdc)
(VDS = 100 Vdc, VGS = 0 Vdc, TJ = 125°C)
IDSS
—
10
200
Adc
Gate–Body Leakage Current (VGS = ± 20 Vdc, VDS = 0)
IGSS
—
100
nAdc
ON CHARACTERISTICS (1)
Gate Threshold Voltage
(VDS = VGS, ID = 250 Adc)
Threshold Temperature Coefficient (Negative)
VGS(th)
2.0
—
7
4
—
Vdc
mV/
°C
Static Drain–Source On–Resistance (VGS = 10 Vdc, ID = 50 Adc)
RDS(on)
—
0.011
Ohm
Drain–Source On–Voltage (VGS = 10 Vdc)
(ID = 100 Adc)
(ID = 50 Adc, TJ = 125°C)
VDS(on)
—
1.0
—
1.2
1.0
Vdc
Forward Transconductance (VDS = 6 Vdc, ID = 50 Adc)
gFS
30
49
—
mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(VDS = 25 Vdc, VGS = 0 Vdc,
f = 1 MHz)
Ciss
—
7600
10640
pF
Output Capacitance
(VDS = 25 Vdc, VGS = 0 Vdc,
f = 1 MHz)
Coss
—
3300
4620
Reverse Transfer Capacitance
f = 1 MHz)
Crss
—
1200
2400
SWITCHING CHARACTERISTICS (2)
Turn–On Delay Time
(VDD = 50 Vdc, ID = 100 Adc,
VGS = 10 Vdc,
RG = 9.1 )
td(on)
—
48
96
ns
Rise Time
(VDD = 50 Vdc, ID = 100 Adc,
VGS = 10 Vdc,
RG = 9.1 )
tr
—
490
980
Turn–Off Delay Time
VGS = 10 Vdc,
RG = 9.1 )
td(off)
—
186
372
Fall Time
G = 9.1 )
tf
—
384
768
Gate Charge
(See Figure 8)
(VDS = 80 Vdc, ID = 100 Adc,
VGS = 10 Vdc)
QT
—
270
378
nC
(See Figure 8)
(VDS = 80 Vdc, ID = 100 Adc,
VGS = 10 Vdc)
Q1
—
50
—
(VDS = 80 Vdc, ID = 100 Adc,
VGS = 10 Vdc)
Q2
—
150
—
Q3
—
118
—
SOURCE–DRAIN DIODE CHARACTERISTICS
Forward On–Voltage
(IS = 100 Adc, VGS = 0 Vdc)
(IS = 100 Adc, VGS = 0 Vdc, TJ = 125°C)
VSD
—
1
0.9
1.2
—
Vdc
Reverse Recovery Time
(See Figure 14)
(IS = 100 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/s)
trr
—
145
—
ns
(See Figure 14)
(IS = 100 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/s)
ta
—
90
—
(IS = 100 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/s)
tb
—
55
—
Reverse Recovery Stored Charge
QRR
—
2.34
—
C
INTERNAL PACKAGE INDUCTANCE
Internal Drain Inductance
(Measured from the drain lead 0.25
″ from package to center of die)
LD
—
4.5
—
nH
Internal Source Inductance
(Measured from the source lead 0.25
″ from package to source bond pad)
LS
—
13
—
nH
(1) Pulse Test: Pulse Width
≤ 300 s, Duty Cycle ≤ 2%.
(2) Switching characteristics are independent of operating junction temperature.
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