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参数资料
| 型号： | Y100N10E |
| 厂商： | Motorola, Inc. |
| 英文描述： | TMOS POWER FET 100 AMPERES 100 VOLTS RDS(on) = 0.011 OHM |
| 中文描述： | TMOS是功率场效应晶体管100安培100伏特的RDS（on）\u003d 0.011欧姆 |
| 文件页数： | 6/8页 |
| 文件大小： | 216K |
| 代理商： | Y100N10E |
MTY100N10E
6
Motorola TMOS Power MOSFET Transistor Device Data
SAFE OPERATING AREA
1
0.1
0.01
1.0E–05
1.0E–04
1.0E–03
1.0E–02
1.0E–01
1.0E+00
1.0E+01
t, TIME (s)
D = 0.5
0.2
r
(t)
,EFFECTIVE
TRANSIENT
THERMAL
RESIST
ANCE
(NORMALIZED)
0.1
0.05
0.02
0.01
250
200
0
25
50
75
100
125
150
1000
100
10
1
0.1
1
10
100
s
10
s
1 ms
10 ms
dc
TJ, STARTING JUNCTION TEMPERATURE (°C)
E AS
,SINGLE
PULSE
DRAIN–T
O–SOURCE
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 12. Maximum Avalanche Energy versus
Starting Junction Temperature
A
V
ALANCHE
ENERGY
(mJ)
I D
,DRAIN
CURRENT
(AMPS)
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
Figure 13. Thermal Response
R
θJC(t) = r(t) RθJC
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) – TC = P(pk) R
θJC(t)
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
VGS = 20 V
SINGLE PULSE
TC = 25°C
ID = 100 A
SINGLE PULSE
150
100
50
Figure 14. Diode Reverse Recovery Waveform
di/dt
trr
ta
tp
IS
0.25 IS
TIME
IS
tb
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