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参数资料
| 型号： | Y100N10E |
| 厂商： | Motorola, Inc. |
| 英文描述： | TMOS POWER FET 100 AMPERES 100 VOLTS RDS(on) = 0.011 OHM |
| 中文描述： | TMOS是功率场效应晶体管100安培100伏特的RDS（on）\u003d 0.011欧姆 |
| 文件页数： | 3/8页 |
| 文件大小： | 216K |
| 代理商： | Y100N10E |
MTY100N10E
3
Motorola TMOS Power MOSFET Transistor Device Data
TYPICAL ELECTRICAL CHARACTERISTICS
R
DS(on)
,DRAIN–T
O–SOURCE
RESIST
ANCE
(NORMALIZED)
R
DS(on)
,DRAIN–T
O–SOURCE
RESIST
ANCE
(OHMS)
R
DS(on)
,DRAIN–T
O–SOURCE
RESIST
ANCE
(OHMS)
1000000
100000
1000
100
1
0
40
80
100
120
1.8
1.6
1.4
1.2
0.8
0.6
– 50
– 25
0
25
50
75
100
125
150
0.011
0.0105
0.01
0.0095
0.009
0.008
ID, DRAIN CURRENT (AMPS)
15 V
0.018
0.016
0.014
0.012
0.006
0
100
200
25
°C
150
50
200
0
2
4
6
8
10
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 1. On–Region Characteristics
I D
,DRAIN
CURRENT
(AMPS)
I D
,DRAIN
CURRENT
(AMPS)
VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
ID, DRAIN CURRENT (AMPS)
Figure 3. On–Resistance versus Drain Current
and Temperature
Figure 4. On–Resistance versus Drain Current
and Gate Voltage
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. On–Resistance Variation with
Temperature
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 6. Drain–To–Source Leakage
Current versus Voltage
I DSS
,LEAKAGE
(nA)
0
VGS = 10 V
VDS ≥ 10 V
VGS = 10 V
TJ = 100°C
– 55
°C
VGS = 10 V
VGS = 0 V
160
120
80
60
2
3
4
5
6
10
0
100
200
150
50
TJ = 125°C
0.01
0.008
20
100
40
20
7
8
9
0.0085
1
10
60
TJ = 25°C
80
40
9 V
8 V
7 V
6 V
5 V
TJ = 25°C
100
°C
25
°C
TJ = – 55°C
25
°C
100
°C
VGS = 10 V
ID = 50 A
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