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参数资料
| 型号： | ZL1505ALNFT |
| 厂商： | Intersil |
| 文件页数： | 11/13页 |
| 文件大小： | 0K |
| 描述： | IC MOSFET DVR STP-DN SYNC 10DFN |
| 标准包装： | 100 |
| 配置： | 高端和低端，同步 |
| 输入类型： | PWM |
| 延迟时间： | 31.5ns |
| 电流 - 峰： | 3.2A |
| 配置数： | 1 |
| 输出数： | 2 |
| 高端电压 - 最大（自引导启动）： | 30V |
| 电源电压： | 4.5 V ~ 7.5 V |
| 工作温度： | -40°C ~ 125°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 10-VFDFN 裸露焊盘 |
| 供应商设备封装： | 10-DFN（3x3） |
| 包装： | 带卷 (TR) |
ZL1505
output current will be limited to 50% of the full rated output
capability. Using HSEL and LSEL, the ZL1505 can be used across
a wide range of applications using only a simple PCB layout
change.
Also, the VDD pin is the gate drive bias supply for the external
MOSFETs. VDD can be used to vary the gate drive strength as
shown for the low-side driver in Figures 9 through 12 and for the
high-side driver in Figures 17 through 20.
Overlap Protection Circuit
The ZL1505 includes an internal watchdog circuit that prevents
excessive shoot-through current from occurring in the unlikely
event that the PWM converter places both switches in the ON
position. If the overlap time between the PWMH and PWML
pulses exceeds 30ns, the PWMH signal will be forced to the LOW
state until the overlap condition ceases, allowing normal
switching operation to continue.
11
Start-up Requirements
During power-up, the ZL1505 maintains both GH and GL outputs
in the LOW state while the V IN voltage is ramping up. Once the
V DD supply is within specification, the GH and GL pins may be
operated using the PWMH and PWML logic inputs respectively.
In the case where the PWM controller is powered from a supply
other than the ZL1505’s V DD supply, and the PWM controller is
powered up first, the PWM controller gate outputs should be kept
in low or in high-impedance state until the V DD supply is within
specification. Additionally, if the ZL1505 begins its power-down
sequence prior to the PWM controller then the PWM controller
gate outputs should be set in low or in high-impedance state
before the V DD voltage supply drops below its specified range.
Thermal Protection
When the junction temperature exceeds +150°C the high-side
driver output GH is forced to logic low state. The driver output is
allowed to switch logic states again once the junction
temperature drops below +134°C.
FN6845.3
February 25, 2011
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相关代理商/技术参数 |
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| ZL1505ALNFT1 | 功能描述:IC MOSFET DVR STP-DN SYNC 10DFN RoHS:是 类别:集成电路 (IC) >> PMIC - MOSFET，电桥驱动器 - 外部开关 系列:- 标准包装:50 系列:- 配置:低端 输入类型:非反相 延迟时间:40ns 电流 - 峰:9A 配置数:1 输出数:1 高端电压 - 最大（自引导启动）:- 电源电压:4.5 V ~ 35 V 工作温度:-40°C ~ 125°C 安装类型:表面贴装 封装/外壳:TO-263-6，D²Pak（5 引线+接片），TO-263BA 供应商设备封装:TO-263 包装:管件 |
| ZL1505ALNFT6 | 功能描述:IC MOSFET DVR STP-DN SYNC 10DFN RoHS:是 类别:集成电路 (IC) >> PMIC - MOSFET，电桥驱动器 - 外部开关 系列:- 标准包装:5 系列:- 配置:低端 输入类型:非反相 延迟时间:600ns 电流 - 峰:12A 配置数:1 输出数:1 高端电压 - 最大（自引导启动）:- 电源电压:14.2 V ~ 15.8 V 工作温度:-20°C ~ 60°C 安装类型:通孔 封装/外壳:21-SIP 模块 供应商设备封装:模块 包装:散装 配用:BG2A-NF-ND - KIT DEV BOARD FOR IGBT 其它名称:835-1063 |
| ZL1505ALNNT | 功能描述:IC MOSFET DRIVER SGL 10DFN RoHS:是 类别:集成电路 (IC) >> PMIC - MOSFET，电桥驱动器 - 外部开关 系列:- 标准包装:50 系列:- 配置:低端 输入类型:非反相 延迟时间:40ns 电流 - 峰:9A 配置数:1 输出数:1 高端电压 - 最大（自引导启动）:- 电源电压:4.5 V ~ 35 V 工作温度:-40°C ~ 125°C 安装类型:表面贴装 封装/外壳:TO-263-6，D²Pak（5 引线+接片），TO-263BA 供应商设备封装:TO-263 包装:管件 |
| ZL1505ALNNT1 | 功能描述:IC MOSFET DRIVER SGL 10DFN RoHS:是 类别:集成电路 (IC) >> PMIC - MOSFET，电桥驱动器 - 外部开关 系列:- 标准包装:50 系列:- 配置:低端 输入类型:非反相 延迟时间:40ns 电流 - 峰:9A 配置数:1 输出数:1 高端电压 - 最大（自引导启动）:- 电源电压:4.5 V ~ 35 V 工作温度:-40°C ~ 125°C 安装类型:表面贴装 封装/外壳:TO-263-6，D²Pak（5 引线+接片），TO-263BA 供应商设备封装:TO-263 包装:管件 |
| ZL1505ALNNT6 | 功能描述:IC MOSFET DVR STP-DN SYNC 10DFN RoHS:是 类别:集成电路 (IC) >> PMIC - MOSFET，电桥驱动器 - 外部开关 系列:- 标准包装:50 系列:- 配置:低端 输入类型:非反相 延迟时间:40ns 电流 - 峰:9A 配置数:1 输出数:1 高端电压 - 最大（自引导启动）:- 电源电压:4.5 V ~ 35 V 工作温度:-40°C ~ 125°C 安装类型:表面贴装 封装/外壳:TO-263-6，D²Pak（5 引线+接片），TO-263BA 供应商设备封装:TO-263 包装:管件 |
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