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参数资料
| 型号： | ZL9101EVAL1Z |
| 厂商： | Intersil |
| 文件页数： | 14/19页 |
| 文件大小： | 0K |
| 描述： | EVALUATION BOARD 1 ZL9101 |
| 标准包装： | 1 |
| 主要目的： | DC/DC，步降 |
| 输出及类型： | 1，非隔离 |
| 输出电压： | 0.6 ~ 4 V |
| 电流 - 输出： | 12A |
| 输入电压： | 12V |
| 稳压器拓扑结构： | 降压 |
| 频率 - 开关： | 615kHz |
| 板类型： | 完全填充 |
| 已供物品： | 板 |
| 已用 IC / 零件： | ZL9101 |
ZL9101M
Please refer to Application Note AN2033 for details on how to
monitor specific parameters via the I 2 C/SMBus interface.
Snapshot Parameter Capture
The ZL9101M offers a special feature that enables the user to
capture parametric data during normal operation or following a
fault. The SnapShot functionality is enabled by setting bit 1 of
MISC_CONFIG to 1.
See AN2033 for details on using SnapShot in addition to the
parameters supported. The SnapShot feature enables the user to
read parameters via a block read transfer through the SMBus.
This can be done during normal operation, although it should be
noted that reading the 22 bytes occupies the SMBus for some
time.
The SNAPSHOT_CONTROL command enables the user to store
the SnapShot parameters to Flash memory in response to a
pending fault, as well as to read the stored data from Flash
memory after a fault has occurred. Table 3 describes the usage
of this command. Automatic writes to Flash memory following a
fault are triggered when any fault threshold level is exceeded,
provided that the specific fault’s response is to shut down
(writing to Flash memory is not allowed if the device is configured
to re-try following the specific fault condition). It should also be
noted that the module’s V DD voltage must be maintained during
the time when the controller is writing the data to Flash memory;
a process that requires between 700μs to 1400μs, depending on
whether the data is set up for a block write. Undesirable results
may be observed if the device’s V DD supply drops below 3.0V
during this process.
TABLE 3. SNAPSHOT_CONTROL COMMAND
DATA
1. Default Store: The ZL9101M has a default configuration that is
stored in the default store in the controller. The module can be
restored to its default settings by issuing a
RESTORE_DEFAULT_ALL command over the SMBus.
2. User Store: The user can modify certain power supply settings
as described in this data sheet. The user stores their
configuration in the user store.
Please refer to Application Note AN2033 for details on how to set
specific security measures via the I 2 C/SMBus interface.
Layout Guide
To achieve stable operation, low losses, and good thermal
performance some layout considerations are necessary
(Figure 16).
? Establish a continuous ground plane connecting SGND (pin 9),
PGND (pin 10), and PGND (pin 16).
? Place a high frequency ceramic capacitor between (1) VIN and
PGND (pin 16), (2) VOUT and PGND (pin 16) and (3) bypass
capacitors between VDRV, VDD, V25, VR and the ground plane,
as close to the module as possible to minimize high frequency
noise. High frequency ceramic capacitors close to the module
between VOUT and PGND will help to minimize noise at the
output ripple.
? Use large copper areas for power path (VIN, PGND, VOUT) to
minimize conduction loss and thermal stress. Also, use
multiple vias to connect the power planes in different layers.
? Connect remote sensed traces to the regulation point to
achieve a tight output voltage regulation, and keep them in
parallel. Route a trace from FB- to a location near the load
ground, and a trace from FB+ to the point-of-load where the
tight output voltage is desired.
VALUE
1
2
DESCRIPTION
Copies current SNAPSHOT values from Flash memory to
RAM for immediate access using SNAPSHOT command.
Writes current SNAPSHOT values to Flash memory. Only
available when device is disabled.
? Avoid routing any sensitive signal traces, such as the VOUT,
FB+, FB- sensing point near the PHASE pin.
CVR
If the module experiences a fault and power is lost, the user can
extract the last SnapShot parameters stored during the fault by
9
8
7
6
5
4
3
2
1
SDA
writing a 1 to SNAPSHOT_CONTROL (transfers data from Flash
PGND
10
2 1
VSET
memory to RAM) and then issuing a SNAPSHOT command (reads
data from RAM via SMBus).
Non-Volatile Memory and Device Security
CV25
CVDD
CVDRV
V25
VDD
VDRV
11
12
13
2 0
1 9
18
VTRK
FB+
FB-
TO
VOUT
TO
LOAD GND
Features
SW
The ZL9101M has internal non-volatile memory where user
configurations are stored. Integrated security measures ensure
that the user can only restore the module to a level that has been
VIN
15
PGND
1 6
14
VOUT
17
made available to them.
During the initialization process, the ZL9101M checks for stored
values contained in its internal non-volatile memory. The
ZL9101M offers two internal memory storage units that are
accessible by the user as follows:
14
CIN
COUT
FIGURE 16. RECOMMENDED LAYOUT
FN7669.4
January 20, 2012
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相关代理商/技术参数 |
参数描述 |
|---|---|
| ZL9101M | 制造商:INTERSIL 制造商全称:Intersil Corporation 功能描述:Digital DC/DC PMBus 12A Module |
| ZL9101M_11 | 制造商:INTERSIL 制造商全称:Intersil Corporation 功能描述:Digital DC/DC PMBus 12A Module |
| ZL9101M_1104 | 制造商:INTERSIL 制造商全称:Intersil Corporation 功能描述:Digital DC/DC PMBus 12A Module |
| ZL9101MIRZ | 功能描述:MODULE DGTL DC-DC 12A 21QFN RoHS:是 类别:电源 - 板载 >> DC DC Converters 系列:ZL9101M 标准包装:15 系列:Econoline REC3-DR 类型:隔离 输出数:2 电压 - 输入（最小）:4.5V 电压 - 输入（最大）:5.5V Voltage - Output 1:5V Voltage - Output 2:-5V Voltage - Output 3:- 电流 - 输出（最大）:300mA，300mA 电源（瓦） - 制造商系列:3W 电压 - 隔离:1kV（1000V） 特点:- 安装类型:表面贴装 封装/外壳:24-DIP SMD 模块（18 引线） 尺寸/尺寸:1.26" L x 0.80" W x 0.44" H（32.0mm x 20.3mm x 11.2mm） 包装:管件 工作温度:-40°C ~ 80°C 效率:75% 电源（瓦特）- 最大:3W 其它名称:10005457 |
| ZL9101MIRZ-T | 功能描述:DCDC DGTL PMBUS MODULE 12A 21QFN RoHS:是 类别:电源 - 板载 >> DC DC Converters 系列:ZL9101M 标准包装:10 系列:PT4570 类型:隔离 输出数:1 电压 - 输入（最小）:36V 电压 - 输入（最大）:75V Voltage - Output 1:9V Voltage - Output 2:- Voltage - Output 3:- 电流 - 输出（最大）:3.3A 电源（瓦） - 制造商系列:30W 电压 - 隔离:1.5kV（1500V） 特点:- 安装类型:表面贴装 封装/外壳:19-SIP SMD 模块 尺寸/尺寸:3.00" L x 1.19" W x 0.50" H（76.2mm x 30.2mm x 12.7mm） 包装:托盘 工作温度:-40°C ~ 85°C 效率:84% 电源（瓦特）- 最大:30W |
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