参数资料
型号: ZXGD3101T8TA
厂商: Diodes Inc
文件页数: 3/14页
文件大小: 0K
描述: IC FLYBACK CONVERTER SOT223-8
标准包装: 1
配置: 高端或低端
输入类型: 非反相
延迟时间: 525ns
电流 - 峰: 4A
配置数: 2
输出数: 2
高端电压 - 最大(自引导启动): 180V
电源电压: 5 V ~ 15 V
工作温度: -40°C ~ 150°C
安装类型: 表面贴装
封装/外壳: SOT-223-8
供应商设备封装: SM8
包装: 标准包装
产品目录页面: 1479 (CN2011-ZH PDF)
其它名称: ZXGD3101T8DKR
ZXGD3101T8
Electrical characteristics at T A = 25°C;
V CC = 10V; R BIAS = 1.8k ? ; R REF =3k ?
Parameter
Symbol
Conditions
Min.
Typ.
Max.
Unit
Input and supply characteristics
Operating current
I OP
V DRAIN ≤ -200m V
V DRAIN ≥ 0V
-
-
3
8
-
-
mA
Gate Driver
Turn-off Threshold
Voltage (**)
V T
V G(off)
V G = 1V, (*)
V DRAIN ≥ 0V, (*)
-45
-
-16
0.6
0
1
mV
V DRAIN = -60mV, (?)
5.0
7.5
-
GATE output voltage
(**)
V DRAIN = -80mV, (?)
7.0
8.5
-
V G
V DRAIN = -100mV, (?)
V DRAIN ≤ -140mV, (?)
V DRAIN ≤ -200mV, (?)
8.4
9.2
9.3
9
9.4
9.5
-
-
-
V
GATEH peak source current
GATEL peak sink current
Turn on Propagation delay
Turn off Propagation delay
Gate rise time
Gate fall time
I SOURCE
I SINK
t d1
t d2
t r
t f
V GH = 1V
V GL = 5V
C L = 2.2nF, (?) (a)
2.5
2.5
525
15
305
20
-
-
A
A
ns
ns
ns
ns
NOTES:
(**) GATEH connected to GATEL
(*) R H = 100K ? , R L = 0/C
(?) R L = 100K ? , R H = 0/C
(a) (Refer to Fig 4; Test circuit and Fig 5; Timing diagram on page 11
Issue 4 - January 2009
? Diodes Incorporated 2009
3
www.zetex.com
www.diodes.com
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