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| 型号： | ZXGD3101T8TA |
| 厂商： | Diodes Inc |
| 文件页数： | 9/14页 |
| 文件大小： | 0K |
| 描述： | IC FLYBACK CONVERTER SOT223-8 |
| 标准包装： | 1 |
| 配置： | 高端或低端 |
| 输入类型： | 非反相 |
| 延迟时间： | 525ns |
| 电流 - 峰： | 4A |
| 配置数： | 2 |
| 输出数： | 2 |
| 高端电压 - 最大（自引导启动）： | 180V |
| 电源电压： | 5 V ~ 15 V |
| 工作温度： | -40°C ~ 150°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | SOT-223-8 |
| 供应商设备封装： | SM8 |
| 包装： | 标准包装 |
| 产品目录页面： | 1479 (CN2011-ZH PDF) |
| 其它名称： | ZXGD3101T8DKR |
ZXGD3101T8
Typical characteristics
Component selection
It is advisable to decouple the ZXGD3101 closely to V CC and ground due to the possibility of high
peak gate currents with C1 in Figure 2.
The proper selection of external resistors R REF and R BIAS is important to the optimum device
operation. Select a value for resistor R REF to give a reference current, I REF , of ~3mA. The value of
R BIAS must then be 0.6 times the value of R REF to give a bias current, I BIAS , of 1.6 times I REF . This
provides a recommended typical offset voltage of -20mV.
External gate resistors are optional. They can be inserted to control the rise times which may help
with EMI issues, power supply consumption issues or dissipation within the part.
R REF = (V CC -0.7V)/ 0.003
R BIAS = (V CC -0.7V)/ 0.005
Layout considerations
The Gate pins should be as close to the MOSFET Gate as possible. Also the ground return loop
should be as short as possible. The decoupling capacitor should be close to the V CC and Ground
pin, and should be a X7R type.
For more detailed information refer to application note AN54.
Issue 4 - January 2009
? Diodes Incorporated 2009
9
www.zetex.com
www.diodes.com
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