参数资料
型号: ZXGD3101T8TA
厂商: Diodes Inc
文件页数: 5/14页
文件大小: 0K
描述: IC FLYBACK CONVERTER SOT223-8
标准包装: 1
配置: 高端或低端
输入类型: 非反相
延迟时间: 525ns
电流 - 峰: 4A
配置数: 2
输出数: 2
高端电压 - 最大(自引导启动): 180V
电源电压: 5 V ~ 15 V
工作温度: -40°C ~ 150°C
安装类型: 表面贴装
封装/外壳: SOT-223-8
供应商设备封装: SM8
包装: 标准包装
产品目录页面: 1479 (CN2011-ZH PDF)
其它名称: ZXGD3101T8DKR
ZXGD3101T8
Operation
Normal Operation
The operation of the device is described step-by-step with reference to the timing diagram below.
1. The detector monitors the MOSFET Drain-Source voltage.
2. When, due to transformer action, the MOSFET body diode is forced to conduct there is
approximately -0.6V on the Drain pin.
3. The detector outputs a positive voltage with respect to ground, this voltage is then fed to the
MOSFET driver stage and current is sourced out of the GATEH pin.
4. The current out of the GATEH pin is sourced into the synchronous MOSFET Gate to turn the
device on.
5. The GATEH output voltage is now proportional to the Drain-Source voltage drop across the
MOSFET due to the current flowing through the MOSFET.
6. MOSFET conduction continues until the drain current reaches zero.
7. At zero current the detector output voltage is zero and the synchronous MOSFET Gate voltage
is pulled low by the GATEL, turning the device off.
Body D iode
2 C onduction
M OSF ET
D rain Voltage
1
D rain
current
zero
6
M OSF ET
Gate Voltage
M OSF ET
Gate C urrent
3
4
5
7
Issue 4 - January 2009
? Diodes Incorporated 2009
5
www.zetex.com
www.diodes.com
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