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| 型号： | ZXM62P02E6TA |
| 厂商： | Diodes Inc |
| 文件页数： | 4/7页 |
| 文件大小： | 0K |
| 描述： | MOSFET P-CH 20V 2.3A SOT23-6 |
| 其它图纸： | SOT-23-6 Pin Out |
| 标准包装： | 1 |
| FET 型： | MOSFET P 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 20V |
| 电流 - 连续漏极(Id) @ 25° C： | 2.3A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 200 毫欧 @ 1.6A，4.5V |
| Id 时的 Vgs(th)（最大）： | 700mV @ 250µA |
| 闸电荷(Qg) @ Vgs： | 5.8nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 320pF @ 15V |
| 功率 - 最大： | 1.1W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | SOT-23-6 |
| 供应商设备封装： | SOT-23-6 |
| 包装： | 标准包装 |
| 产品目录页面： | 1472 (CN2011-ZH PDF) |
| 其它名称： | ZXM62P02E6DKR |
ZXM62P02E6
ELECTRICAL CHARACTERISTICS (at T amb = 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN.
TYP.
MAX.
UNIT CONDITIONS.
STATIC
Drain-Source Breakdown Voltage
V (BR)DSS
-20
V
I D =-250 μ A, V GS =0V
Zero Gate Voltage Drain Current
I DSS
-1
μ A
V DS =-20V, V GS =0V
Gate-Body Leakage
I GSS
± 100
nA
V GS = ± 12V, V DS =0V
Gate-Source Threshold Voltage
V GS(th)
-0.7
V
I D =-250 μ A, V DS = V GS
Static Drain-Source On-State Resistance
(1)
R DS(on)
0.2
0.375
?
?
V GS =-4.5V, I D =-1.6A
V GS =-2.7V, I D =-0.8A
Forward Transconductance (3)
g fs
1.5
S
V DS =-10V,I D =-0.8A
DYNAMIC (3)
Input Capacitance
C iss
320
pF
Output Capacitance
C oss
150
pF
V DS =-15 V, V GS =0V,
f=1MHz
Reverse Transfer Capacitance
C rss
75
pF
SWITCHING (2) (3)
Turn-On Delay Time
t d(on)
4.1
ns
Rise Time
Turn-Off Delay Time
t r
t d(off)
15.4
12.0
ns
ns
V DD =-10V, I D =-1.6A
R G =6.0 ? , R D =6.1 ?
(Refer to test circuit)
Fall Time
t f
19.2
ns
Total Gate Charge
Q g
5.8
nC
Gate-Source Charge
Q gs
1.25
nC
V DS =-16V,V GS =-4.5V,
I D =-1.6A
Gate Drain Charge
Q gd
2.8
nC
(Refer to test circuit)
SOURCE-DRAIN DIODE
Diode Forward Voltage (1)
V SD
-0.95
V
T j =25°C, I S =-1.6A,
V GS =0V
Reverse Recovery Time (3)
Reverse Recovery Charge(3)
t rr
Q rr
22.5
10.4
ns
nC
T j =25°C, I F =-1.6A,
di/dt= 100A/ μ s
(1) Measured under pulsed conditions. Width=300 μ s. Duty cycle ≤ 2% .
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
ISSUE 1 - JU NE 2004
4
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相关代理商/技术参数 |
参数描述 |
|---|---|
| ZXM62P02E6TA-CUT TAPE | 制造商:DIODES 功能描述:ZXM62P02E6 20 V 0.2 Ohm P-Channel Enhancement Mode Vertical DMOS FET - SOT-23-6 |
| ZXM62P02E6TC | 功能描述:MOSFET 20V P-Chnl HDMOS RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| ZXM62P03E6 | 制造商:Diodes Incorporated 功能描述:MOSFET P SOT-23-6 制造商:Diodes Incorporated 功能描述:MOSFET, P, SOT-23-6 制造商:Diodes Incorporated 功能描述:MOSFET, P CH, 30V, -1.5A, SOT-23; Transistor Polarity:P Channel; Continuous Drain Current Id:-1.5A; Drain Source Voltage Vds:30V; On Resistance Rds(on):110mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:-1V ;RoHS Compliant: Yes |
| ZXM62P03E6 | 制造商:Diodes Incorporated 功能描述:MOSFET P SOT-23-6 |
| ZXM62P03E6_05 | 制造商:ZETEX 制造商全称:ZETEX 功能描述:30V P-CHANNEL ENHANCEMENT MODE MOSFET |
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