参数资料
型号: ZXMD63P02XTC
厂商: Diodes Inc
文件页数: 4/7页
文件大小: 0K
描述: MOSFET DUAL P-CHAN 20V 8MSOP
标准包装: 4,000
FET 型: 2 个 P 沟道(双)
FET 特点: 逻辑电平门
漏极至源极电压(Vdss): 20V
电流 - 连续漏极(Id) @ 25° C: 1.7A
开态Rds(最大)@ Id, Vgs @ 25° C: 270 毫欧 @ 1.2A,4.5V
Id 时的 Vgs(th)(最大): 700mV @ 250µA
闸电荷(Qg) @ Vgs: 5.25nC @ 4.5V
输入电容 (Ciss) @ Vds: 290pF @ 15V
功率 - 最大: 870mW
安装类型: 表面贴装
封装/外壳: 8-TSSOP,8-MSOP(0.118",3.00mm 宽)
供应商设备封装: 8-MSOP
包装: 带卷 (TR)
ZXMD63P02X
ELECTRICAL CHARACTERISTICS (at T amb = 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN.
TYP.
MAX.
UNIT CONDITIONS.
STATIC
Drain-Source Breakdown Voltage
V (BR)DSS
-20
V
I D =-250 μ A, V GS =0V
Zero Gate Voltage Drain Current
I DSS
-1
μ A
V DS =-20V, V GS =0V
Gate-Body Leakage
I GSS
± 100
nA
V GS = ± 12V, V DS =0V
Gate-Source Threshold Voltage
V GS(th)
-0.7
V
I D =-250 μ A, V DS =
V GS
Static Drain-Source On-State Resistance
(1)
R DS(on)
0.27
0.40
?
?
V GS =-4.5V, I D =-1.2A
V GS =-2.7V, I D =-0.6A
Forward Transconductance (3)
g fs
1.3
S
V DS =-10V,I D =-0.6A
DYNAMIC (3)
Input Capacitance
C iss
290
pF
Output Capacitance
C oss
120
pF
V DS =-15 V, V GS =0V,
f=1MHz
Reverse Transfer Capacitance
C rss
50
pF
SWITCHING(2) (3)
Turn-On Delay Time
t d(on)
3.4
ns
Rise Time
Turn-Off Delay Time
t r
t d(off)
9.6
16.4
ns
ns
V DD =-10V, I D =-1.2A
R G =6.0 ? , R D =8.3 ?
(Refer to test
Fall Time
t f
20.4
ns
circuit)
Total Gate Charge
Q g
5.25
nC
Gate-Source Charge
Q gs
1.0
nC
V DS =-16V,V GS =-4.5V,
I D =-1.2A
Gate Drain Charge
Q gd
2.25
nC
(Refer to test
circuit)
SOURCE-DRAIN DIODE
Diode Forward Voltage (1)
V SD
-0.95
V
T j =25°C, I S =-1.2A,
V GS =0V
Reverse Recovery Time (3)
Reverse Recovery Charge(3)
t rr
Q rr
21.7
9.6
ns
nC
T j =25°C, I F =-1.2A,
di/dt= 100A/ μ s
(1) Measured under pulsed conditions. Width=300 μ s. Duty cycle ≤ 2% .
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
ISSUE 1 - JUNE 2004
4
相关PDF资料
PDF描述
ZXMD63P03XTC MOSFET DUAL P-CHAN 30V 8MSOP
ZXMHC10A07T8TA MOSFET H-BRIDGE N/P-CH 100V SM8
ZXMHC3A01N8TC MOSFET H-BRIDGE COMPL 8-SOIC
ZXMHC3F381N8TC MOSFET COMPL H-BRIDGE 30V 8-SOIC
ZXMHC6A07N8TC MOSFET COMPL H-BRIDGE 60V 8-SOIC
相关代理商/技术参数
参数描述
ZXMD63P03X 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:DUAL 30V P-CHANNEL ENHANCEMENT MODE MOSFET
ZXMD63P03X_05 制造商:ZETEX 制造商全称:ZETEX 功能描述:DUAL 30V P-CHANNEL ENHANCEMENT MODE MOSFET
ZXMD63P03XTA 功能描述:MOSFET Dual 30V P Chl HDMOS RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
ZXMD63P03XTC 功能描述:MOSFET Dual 30V P Chl HDMOS RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
ZXMD65N02N8TA 功能描述:MOSFET N-CHAN DUAL 20V 8-SOIC RoHS:否 类别:分离式半导体产品 >> FET - 阵列 系列:- 产品目录绘图:8-SOIC Mosfet Package 标准包装:1 系列:- FET 型:2 个 N 沟道(双) FET 特点:逻辑电平门 漏极至源极电压(Vdss):60V 电流 - 连续漏极(Id) @ 25° C:3A 开态Rds(最大)@ Id, Vgs @ 25° C:75 毫欧 @ 4.6A,10V Id 时的 Vgs(th)(最大):3V @ 250µA 闸电荷(Qg) @ Vgs:20nC @ 10V 输入电容 (Ciss) @ Vds:- 功率 - 最大:1.4W 安装类型:表面贴装 封装/外壳:PowerPAK? SO-8 供应商设备封装:PowerPAK? SO-8 包装:Digi-Reel® 产品目录页面:1664 (CN2011-ZH PDF) 其它名称:SI7948DP-T1-GE3DKR