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| 型号： | ZXMHC3A01N8TC |
| 厂商： | Diodes Inc |
| 文件页数： | 2/11页 |
| 文件大小： | 0K |
| 描述： | MOSFET H-BRIDGE COMPL 8-SOIC |
| 标准包装： | 1 |
| FET 型： | 2 个 N 通道和 2 个 P 通道（H 桥式） |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 2.17A，1.64A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 125 毫欧 @ 2.5A，10V |
| Id 时的 Vgs(th)（最大）： | 3V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 3.9nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 190pF @ 25V |
| 功率 - 最大： | 870mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SOP |
| 包装： | 标准包装 |
| 产品目录页面： | 1473 (CN2011-ZH PDF) |
| 其它名称： | ZXMHC3A01N8DIDKR |
ZXMHC3A01N8
Absolute maximum ratings
Parameter
Symbol
N-
P-
Unit
channel
channel
Drain-Source voltage
Gate-Source voltage
V DSS
V GS
30
± 20
-30
± 20
V
V
Continuous Drain current @ V GS = 10V; T A =25 ° C
@ V GS = 10V; T A =70 ° C
@ V GS = 10V; T A =25 ° C
@ V GS = 10V; T L =25 ° C
(b)
(b)
(a)
(f)
I D
2.72
2.18
2.17
2.21
-2.06
-1.65
-1.64
-1.67
A
Pulsed Drain current @ V GS = 10V; T A =25 ° C
(c)
I DM
11.7
-8.84
A
Continuous Source current (Body diode) at T A =25 ° C
(b)
I S
1.60
-1.60
A
Pulsed Source current (Body diode) at T A =25 ° C
(a)
Power dissipation at T A =25 ° C
Linear derating factor
(b)
Power dissipation at T A =25 ° C
Linear derating factor
(f)
Power dissipation at T L =25 ° C
Linear derating factor
(c)
I SM
P D
P D
P D
11.7
0.87
6.94
1.36
10.9
0.90
7.19
-8.84
A
W
mW/ ° C
W
mW/ ° C
W
mW/ ° C
Operating and storage temperature range
T j , T stg
-55 to 150
° C
Thermal resistance
Parameter
Symbol
Value
Unit
Junction to ambient
Junction to ambient
Junction to ambient
Junction to ambient
(a)
(b)
(d)
(e)
R θ JA
R θ JA
R θ JA
R θ JA
144
92
106
254
° C/W
° C/W
° C/W
° C/W
Junction to lead
(f)
R θ JL
139
° C/W
NOTES:
(a)
(b)
(c)
(d)
(e)
(f)
For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still
air conditions with the heat-sink split into two equal areas (one for each drain connection); the device is measured when
operating in a steady-state condition with one active die.
Same as note (a), except the device is measured at t ≤ 10 sec.
Same as note (a), except the device is pulsed with D= 0.02 and pulse width 300 μs. The pulse current is limited by the
maximum junction temperature.
For a device surface mounted on 50mm x 50mm x 1.6mm FR4 PCB with high coverage of single sided 2oz copper, in still
air conditions with the heat-sink split into two equal areas (one for each drain connection); the device is measured when
operating in a steady-state condition with one active die.
For a device surface mounted on minimum copper 1.6mm FR4 PCB, in still air conditions; the device is measured when
operating in a steady-state condition with one active die.
Thermal resistance from junction to solder-point (at the end of the drain lead); the device is operating in a steady-state
condition with one active die.
Issue 1.0 - March 2009
? Diodes Incorporated
2
www.diodes.com
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相关代理商/技术参数 |
参数描述 |
|---|---|
| ZXMHC3A01T8 | 制造商:ZETEX 制造商全称:ZETEX 功能描述:COMPLEMENTARY 30V ENHANCEMENT MODE MOSFET H-BRIDGE |
| ZXMHC3A01T8TA | 功能描述:MOSFET 30/30V 3.1/2.3A N & P Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| ZXMHC3A01T8TC | 制造商:ZETEX 制造商全称:ZETEX 功能描述:COMPLEMENTARY 30V ENHANCEMENT MODE MOSFET H-BRIDGE |
| ZXMHC3F381N8 | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:30V SO8 Complementary enhancement mode MOSFET H-Bridge |
| ZXMHC3F381N8TC | 功能描述:MOSFET MOSFET H-BRIDGE SOP-8L RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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