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| 型号： | ZXMN3A01FTC |
| 厂商： | Diodes Inc |
| 文件页数： | 2/7页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CHAN 30V SOT23-3 |
| 标准包装： | 10,000 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 1.8A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 120 毫欧 @ 2.5A，10V |
| Id 时的 Vgs(th)（最大）： | 1V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 3.9nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 190pF @ 25V |
| 功率 - 最大： | 625mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-236-3，SC-59，SOT-23-3 |
| 供应商设备封装： | SOT-23-3 |
| 包装： | 带卷 (TR) |
ZXMN3A01F
Maximum Ratings (@T A = +25°C, unless otherwise specified.)
Drain-Source Voltage
Gate-Source Voltage
Characteristic
(Note 6)
T A = +25°C
Symbol
V DSS
V GSS
Value
30
± 20
2.0
Units
V
V
Continuous Drain Current, V GS = 10V
Pulsed Drain Current (Note 7)
Maximum Body Diode Continuous Current (Note 6)
(Note 6)
(Note 5)
T A = +70°C
T A = +25°C
I D
I DM
I S
1.6
1.8
8
1.3
A
A
A
Thermal Characteristics (@T A = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Units
Total Power Dissipation
Linear Derating Factor
Total Power Dissipation
Linear Derating Factor
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
(Note 5)
(Note 6)
(Note 5)
(Note 6)
P D
P D
R θ JA
T J, T STG
625
5
806
6.4
200
155
-55 to +150
mW
mW/°C
mW
mW/°C
°C/W
°C
Notes:
5. For a device surface mounted on 25mm x 25mm FR-4 PCB with high coverage of single sided 1oz copper, in still air conditions.
6. For a device surface mounted on FR-4 PCB measured at t ≦ 5 secs.
7. Repetitive rating 25mm x 25mm FR4 PCB, D = 0.05, pulse width 10 μ s - pulse width limited by maximum junction temperature. Refer to Transient
Thermal Impedance graph.
ZXMN3A01F
Document number: DS33528 Rev. 3 - 2
2 of 7
www.diodes.com
February 2014
? Diodes Incorporated
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| ZXMN3A01ZTA | 功能描述:MOSFET 30V N-Ch ENH Mode 120mOhm 10VGS 3.3A RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| ZXMN3A02N8 | 制造商:ZETEX 制造商全称:ZETEX 功能描述:30V N-CHANNEL ENHANCEMENT MODE MOSFET |
| ZXMN3A02N8TA | 功能描述:MOSFET 30V N Chnl UMOS RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| ZXMN3A02N8TC | 制造商:ZETEX 制造商全称:ZETEX 功能描述:30V N-CHANNEL ENHANCEMENT MODE MOSFET |
| ZXMN3A02X8 | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:30V N-CHANNEL ENHANCEMENT MODE MOSFET |
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