参数资料
型号: ZXMN3A03E6TC
厂商: Diodes Inc
文件页数: 1/7页
文件大小: 0K
描述: MOSFET N-CHAN 30V SOT23-6
标准包装: 10,000
FET 型: MOSFET N 通道,金属氧化物
FET 特点: 逻辑电平门
漏极至源极电压(Vdss): 30V
电流 - 连续漏极(Id) @ 25° C: 3.7A
开态Rds(最大)@ Id, Vgs @ 25° C: 50 毫欧 @ 7.8A,10V
Id 时的 Vgs(th)(最大): 1V @ 250µA
闸电荷(Qg) @ Vgs: 12.6nC @ 10V
输入电容 (Ciss) @ Vds: 600pF @ 25V
功率 - 最大: 1.1W
安装类型: 表面贴装
封装/外壳: SOT-23-6
供应商设备封装: SOT-23-6
包装: 带卷 (TR)
ZXMN3A03E6
30V N-CHANNEL ENHANCEMENT MODE MOSFET
SUMMARY
V (BR)DSS = 30V; R DS(ON) = 0.050
I D = 4.6A
DESCRIPTION
This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure
that combines the benefits of low on-resistance with fast switching speed. This
makes them ideal for high efficiency, low voltage, power management
applications.
SOT23-6
FEATURES
? Low on-resistance
? Fast switching speed
? Low threshold
? Low gate drive
? SOT23-6 package
APPLICATIONS
? DC - DC converters
? Power management functions
? Disconnect switches
? Motor control
ORDERING INFORMATION
PINOUT
DEVICE
ZXMN3A03E6TA
ZXMN3A03E6TC
DEVICE MARKING
? 3A3
REEL
SIZE
7”
13”
TAPE
WIDTH
8mm
8mm
QUANTITY
PER REEL
3000 units
10000 units
Top View
ISSUE 3 - OCTOBER 2005
1
SEMICONDUCTORS
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相关代理商/技术参数
参数描述
ZXMN3A04DN8 制造商:Diodes Incorporated 功能描述:MOSFET DUAL N SO-8
ZXMN3A04DN8 制造商:Diodes Incorporated 功能描述:MOSFET N DUAL SO-8
ZXMN3A04DN8_02 制造商:ZETEX 制造商全称:ZETEX 功能描述:DUAL 30V N-CHANNEL ENHANCEMENT MODE MOSFET
ZXMN3A04DN8TA 功能描述:MOSFET Dl 30V N-Chnl UMOS RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
ZXMN3A04DN8TC 功能描述:MOSFET Dl 30V N Chnl UMOS RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube