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参数资料
| 型号： | ZXMN3A03E6TC |
| 厂商： | Diodes Inc |
| 文件页数： | 4/7页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CHAN 30V SOT23-6 |
| 标准包装： | 10,000 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 3.7A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 50 毫欧 @ 7.8A，10V |
| Id 时的 Vgs(th)（最大）： | 1V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 12.6nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 600pF @ 25V |
| 功率 - 最大： | 1.1W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | SOT-23-6 |
| 供应商设备封装： | SOT-23-6 |
| 包装： | 带卷 (TR) |
ZXMN3A03E6
ELECTRICAL CHARACTERISTICS (at T A = 25°C unless otherwise stated)
PARAMETER
SYMBOL
MIN.
TYP.
MAX. UNIT CONDITIONS.
STATIC
I =250 A, V DS = V GS
Drain-source breakdown voltage
Zero gate voltage drain current
Gate-body leakage
Gate-source threshold voltage
V (BR)DSS
I DSS
I GSS
V GS(th)
30
1
0.5
100
V
A
nA
V
I D =250 A, V GS =0V
V DS =30V, V GS =0V
V GS = 20V, V DS =0V
D
Static drain-source on-state resistance
(1)
R DS(on)
0.050
0.065
V GS =10V, I D =7.8A
V GS =4.5V, I D =6.8A
Forward transconductance (1)(3)
g fs
10
S
V DS =10V,I D =7.8A
DYNAMIC
(3)
Input capacitance
Output capacitance
Reverse transfer capacitance
C iss
C oss
C rss
600
104
58.5
pF
pF
pF
V DS =25 V, V GS =0V,
f=1MHz
SWITCHING
(2) (3)
Turn-on delay time
t d(on)
2.9
ns
Rise time
Turn-off delay time
Fall time
Gate charge
Total gate charge
Gate-source charge
Gate-drain charge
t r
t d(off)
t f
Q g
Q g
Q gs
Q gd
6.4
16.0
11.2
6.9
12.6
2.0
2.0
ns
ns
ns
nC
nC
nC
nC
V DD =15V, I D =3.5A
R G =6.0 , V GS =10V
V DS =15V,V GS =5V,
I D =3.5A
V DS =15V,V GS =10V,
I D =3.5A
SOURCE-DRAIN DIODE
Diode forward voltage (1)
Reverse recovery time (3)
Reverse recovery charge (3)
V SD
t rr
Q rr
0.85
18.8
14.1
0.95
V
ns
nC
T J =25°C, I S =3.2A,
V GS =0V
T J =25°C, I F =3.5A,
di/dt= 100A/ μ s
NOTES:
(1) Measured under pulsed conditions. Width = 300 μ s. Duty cycle ≤ 2% .
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
ISSUE 3 - OCTOBER 2005
SEMICONDUCTORS
4
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