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参数资料
| 型号： | ZXMN3A02N8TA |
| 厂商： | Diodes/Zetex |
| 文件页数： | 4/7页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 30V 5.3A 8-SOIC |
| 产品目录绘图： | SO-8 |
| 其它图纸： | SO-8 Single Pin Out |
| 标准包装： | 500 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 7.3A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 25 毫欧 @ 12A，10V |
| Id 时的 Vgs(th)（最大）： | 1V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 26.8nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 1400pF @ 25V |
| 功率 - 最大： | 1.56W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SOP |
| 包装： | 带卷 (TR) |
ZXMN3A02N8
ELECTRICAL CHARACTERISTICS (at T amb = 25°C unless otherwise stated).
PARAMETER
SYMBOL
MIN.
TYP.
MAX. UNIT
CONDITIONS.
STATIC
I =250 A, V DS = V GS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
Gate-Source Threshold Voltage
V (BR)DSS
I DSS
I GSS
V GS(th)
30
1.0
1
100
V
A
nA
V
I D =250 μ A, V GS =0V
V DS =30V, V GS =0V
V GS = 20V, V DS =0V
D
Static Drain-Source On-State Resistance R DS(on)
(1)
0.025
0.035
V GS =10V, I D =12A
V GS =4.5V, I D =10.2A
Forward Transconductance (1)(3)
g fs
22
S
V DS =10V,I D =12A
DYNAMIC (3)
Input Capacitance
C iss
1400
pF
Output Capacitance
Reverse Transfer Capacitance
C oss
C rss
209
120
pF
pF
V DS =25V, V GS =0V,
f=1MHz
SWITCHING (2) (3)
Turn-On Delay Time
t d(on)
3.9
ns
Rise Time
Turn-Off Delay Time
Fall Time
Gate Charge
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
tr
t d(off)
tf
Qg
Qg
Q gs
Q gd
5.5
35.0
7.6
14.5
26.8
4.7
4.7
ns
ns
ns
nC
nC
nC
nC
V DD =10V, I D =1A
R G ? 6.0 ? , V GS =4.5V
(refer to test circuit)
V DS =15V,V GS =5V,
I D =5.5A
(refer to test circuit)
V DS =15V,V GS =10V,
I D =5.5A
(refer to test circuit)
SOURCE-DRAIN DIODE
Diode Forward Voltage (1)
Reverse Recovery Time (3)
Reverse Recovery Charge (3)
V SD
t rr
Q rr
0.85
17
8.3
0.95
V
ns
nC
T J =25°C, I S =9A,
V GS =0V
T J =25°C, I F =5.5A,
di/dt= 100A/ μ s
NOTES
(1) Measured under pulsed conditions. Width ≤ 300 μ s. Duty cycle ≤ 2% .
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
ISSUE 4 - JANUARY 2005
SEMICONDUCTORS
4
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相关代理商/技术参数 |
参数描述 |
|---|---|
| ZXMN3A02N8TC | 制造商:ZETEX 制造商全称:ZETEX 功能描述:30V N-CHANNEL ENHANCEMENT MODE MOSFET |
| ZXMN3A02X8 | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:30V N-CHANNEL ENHANCEMENT MODE MOSFET |
| ZXMN3A02X8TA | 功能描述:MOSFET 30V N Chnl UMOS RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| ZXMN3A02X8TC | 功能描述:MOSFET 30V N Chnl UMOS RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| ZXMN3A03E6 | 制造商:Diodes Incorporated 功能描述:MOSFET N SOT-23-6 制造商:Diodes Incorporated 功能描述:MOSFET, N, SOT-23-6 制造商:Diodes Incorporated 功能描述:MOSFET, N CH, 30V, 4.6A, SOT-23; Transistor Polarity:N Channel; Continuous Drain Current Id:4.6A; Drain Source Voltage Vds:30V; On Resistance Rds(on):50mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1V; No. of Pins:6 ;RoHS Compliant: Yes |
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