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| 型号： | ZXMN3A14FTA |
| 厂商： | Diodes Inc |
| 文件页数： | 2/8页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 30V 3.2A SOT23-3 |
| 其它图纸： | SOT-23 SOT-23 Top |
| 标准包装： | 1 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 3.2A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 65 毫欧 @ 3.2A，10V |
| Id 时的 Vgs(th)（最大）： | 1V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 8.6nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 448pF @ 15V |
| 功率 - 最大： | 1W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-236-3，SC-59，SOT-23-3 |
| 供应商设备封装： | SOT-23-3 |
| 包装： | 标准包装 |
| 产品目录页面： | 1472 (CN2011-ZH PDF) |
| 其它名称： | ZXMN3A14FDKR |
A Product Line of
Diodes Incorporated
ZXMN3A14F
Maximum Ratings @T A = 25°C unless otherwise specified
Drain-Source Voltage
Gate-Source Voltage
Characteristic
(Note 5)
Symbol
V DSS
V GS
Value
30
±20
3.9
Units
V
V
Continuous Drain Current
V GS = 10V
T A = 70°C
(Note 5)
I D
3.2
A
(Note 4)
3.2
Pulsed Drain Current (Note 6)
Continuous Source Current (Body Diode) (Note 5)
Pulsed Source Current (Body Diode) (Note 6)
I DM
I S
I SM
18
2.3
18
A
A
A
Thermal Characteristics @T A = 25°C unless otherwise specified
Characteristic
Power Dissipation (Note 4)
Linear Derating Factor
Power Dissipation (Note 5)
Linear Derating Factor
Thermal Resistance, Junction to Ambient (Note 4)
Thermal Resistance, Junction to Ambient (Note 5)
Thermal Resistance, Junction to Leads (Note 7)
Operating and Storage Temperature Range
Symbol
P D
P D
R θ JA
R θ JA
R θ JL
T J, T STG
Value
1
8
1.5
12
125
83
70.44
-55 to +150
Unit
W
mW/°C
W
mW/°C
°C/W
°C/W
°C/W
°C
Notes:
4. For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions
5. For a device surface mounted on FR4 PCB measured at t ≤ 5 secs.
6. Repetitive rating 25mm x 25mm FR4 PCB, D=0.02 pulse width=300 μ s - pulse current limited by maximum junction temperature.
7. Thermal resistance from junction to solder-point (at the end of the drain lead).
ZXMN3A14F
Document Number DS33536 Rev. 2 - 2
2 of 8
www.diodes.com
April 2012
? Diodes Incorporated
相关PDF资料 |
PDF描述 |
|---|---|
| ZXMN3AM832TA | MOSFET N-CHAN DUAL 30V 8MLP |
| ZXMN3AMCTA | MOSFET 2N-CH 30V 2.9A DFN |
| ZXMN3B01FTA | MOSFET N-CHAN 30V 2A SOT23-3 |
| ZXMN3B04N8TC | MOSFET N-CHAN 30V 8SOIC |
| ZXMN3B14FTA | MOSFET N-CHAN 30V 3.5A SOT23-3 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| ZXMN3A14FTA-CUT TAPE | 制造商:DIODES 功能描述:ZXMN3A14 Series 30 V 0.065 Ohm N-Channel Enhancement Mode MOSFET - SOT-23-3 |
| ZXMN3A14FTC | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:30V N-CHANNEL ENHANCEMENT MODE MOSFET |
| ZXMN3AM832 | 制造商:ZETEX 制造商全称:ZETEX 功能描述:MPPS Miniature Package Power Solutions DUAL 30V N-CHANNEL ENHANCEMENT MODE MOSFET |
| ZXMN3AM832(1) | 制造商:未知厂家 制造商全称:未知厂家 功能描述: |
| ZXMN3AM832TA | 功能描述:MOSFET Dl 30V N Chnl UMOS RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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