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参数资料
| 型号： | ZXMN3AMCTA |
| 厂商： | Diodes Inc |
| 文件页数： | 1/8页 |
| 文件大小： | 0K |
| 描述： | MOSFET 2N-CH 30V 2.9A DFN |
| 标准包装： | 1 |
| FET 型： | 2 个 N 沟道（双） |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 2.9A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 120 毫欧 @ 2.5A，10V |
| Id 时的 Vgs(th)（最大）： | 3V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 3.9nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 190pF @ 25V |
| 功率 - 最大： | 1.5W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-WDFN 裸露焊盘 |
| 供应商设备封装： | 8-DFN（3x2） |
| 包装： | 标准包装 |
| 其它名称： | ZXMN3AMCTADKR |
A Product Line of
Diodes Incorporated
ZXMN3AMC
30V DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
Features and Benefits
6mm footprint, 50% smaller than TSOP6 and SOT23-6
V (BR)DSS
30V
R DS(on) max
120m Ω @ V GS = 10V
180m Ω @ V GS = 4.5V
I D max
T A = 25°C
(Notes 4 & 7)
3.7A
3.0A
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Low profile package, for thin applications
Low R θ JA , thermally efficient package
2
Low on-resistance
Fast switching speed
“Lead-Free”, RoHS Compliant (Note 1)
Halogen and Antimony Free. "Green" Device (Note 2)
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Qualified to AEC-Q101 Standards for High Reliability
Description and Applications
This MOSFET has been designed to minimize the on-state resistance
Mechanical Data
(R DS(on) ) and yet maintain superior switching performance, making it
ideal for high efficiency power management applications.
? DC-DC Converters
? Power management functions
? Disconnect switches
? Portable applications
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Case: DFN3020B-8
Terminals: Pre-Plated NiPdAu leadframe
Nominal package height: 0.8mm
UL Flammability Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Solderable per MIL-STD-202, Method 208
Weight: 0.013 grams (approximate)
DFN3020B-8
D2
D2
D1
D1
D1
D2
D2
D1
G1
G2
G2
S2
G1
S1
S1
S2
Top View
Bottom View
Bottom View
Pin-Out
Pin 1
Equivalent Circuit
Ordering Information (Note 3)
Part Number
ZXMN3AMCTA
Marking
DNB
Reel size (inches)
7
Tape width (mm)
8
Quantity per reel
3000
Notes:
1. No purposefully added lead
2. Diodes Inc's "Green" policy can be found on our website at http://www.diodes.com.
3. For packaging details, go to our website at http://www.diodes.com.
Marking Information
DNB
DNB = Product Type Marking Code
Top View, Dot Denotes Pin 1
ZXMN3AMC
Document number: DS35087 Rev. 1 - 2
1 of 8
www.diodes.com
December 2010
? Diodes Incorporated
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PDF描述 |
|---|---|
| ZXMN3B01FTA | MOSFET N-CHAN 30V 2A SOT23-3 |
| ZXMN3B04N8TC | MOSFET N-CHAN 30V 8SOIC |
| ZXMN3B14FTA | MOSFET N-CHAN 30V 3.5A SOT23-3 |
| ZXMN3F30FHTA | MOSFET N-CHAN 30V SOT23-3 |
| ZXMN3F31DN8TA | MOSFET N-CHAN 30V 8SOIC DUAL |
相关代理商/技术参数 |
参数描述 |
|---|---|
| ZXMN3B01F | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:30V N-CHANNEL ENHANCEMENT MODE MOSFET 2.5V GATE DRIVE |
| ZXMN3B01FTA | 功能描述:MOSFET 30V N Chnl UMOS RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| ZXMN3B01FTC | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:30V N-CHANNEL ENHANCEMENT MODE MOSFET 2.5V GATE DRIVE |
| ZXMN3B04N8 | 制造商:ZETEX 制造商全称:ZETEX 功能描述:30V N-CHANNEL ENHANCEMENT MODE MOSFET 2.5V GATE DRIVE |
| ZXMN3B04N8TA | 功能描述:MOSFET 30V N-Chnl UMOS RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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