参数资料
型号: ZXMN3F31DN8TA
厂商: Diodes Inc
文件页数: 2/8页
文件大小: 0K
描述: MOSFET N-CHAN 30V 8SOIC DUAL
产品目录绘图: SO-8
SO-8 Dual Pin Out
标准包装: 1
FET 型: 2 个 N 沟道(双)
FET 特点: 逻辑电平门
漏极至源极电压(Vdss): 30V
电流 - 连续漏极(Id) @ 25° C: 5.7A
开态Rds(最大)@ Id, Vgs @ 25° C: 24 毫欧 @ 7A,10V
Id 时的 Vgs(th)(最大): 3V @ 250µA
闸电荷(Qg) @ Vgs: 12.9nC @ 10V
输入电容 (Ciss) @ Vds: 608pF @ 15V
功率 - 最大: 1.25W
安装类型: 表面贴装
封装/外壳: 8-SOIC(0.154",3.90mm 宽)
供应商设备封装: 8-SO
包装: 标准包装
产品目录页面: 1473 (CN2011-ZH PDF)
其它名称: ZXMN3F31DN8DKR
ZXMN3F31DN8
Absolute maximum ratings
Parameter
Drain source voltage
Gate source voltage
Continous Drain Current @ V GS =10; T A =25 ° C (b)
@ V GS =10; T A =70 ° C (b)
@ V GS =10; T A =25 ° C (a)
Pulsed drain current (c)
Continuous source current (body diode) (b)
Pulsed source current (body diode) (c)
Power dissipation at T A =25 ° C (a)(d)
Linear derating factor
Power dissipation at T A =25 ° C (a)(e)
Linear derating factor
Power dissipation at T A =25 ° C (b)(d)
Linear derating factor
Operating and storage temperature range
Symbol
V DSS
V GS
I D
I DM
I S
I SM
P D
P D
P D
T j , T stg
Limit
30
±20
7.3
5.9
5.7
33
3.5
33
1.25
10
1.8
14
2.1
17
-55 to 150
Unit
V
V
A
A
A
A
A
A
W
mW/ ° C
W
mW/ ° C
W
mW/ ° C
° C
Thermal resistance
Parameter
Junction to ambient (a)(d)
Junction to ambient (a)(e)
Junction to ambient (b)(d)
Junction to lead (f)
Symbol
R JA
R JA
R JA
R JL
Limit
100
70
60
53
Unit
° C/W
° C/W
° C/W
° C/W
NOTES:
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air
conditions.
(b) For a device surface mounted on FR4 PCB measured at t ≤ 10 sec.
(c) Repetitive rating - 25mm x 25mm FR4 PCB, D=0.02, pulse width 300 μ s - pulse width limited by maximum junction
temperature.
(d) For a dual device with one active die.
(e) For a device with two active die running at equal power.
(f) Thermal resistance from junction to solder-point (at end of drain lead).
Issue 2 - February 2008
? Zetex Semiconductors plc 2008
2
www.zetex.com
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