参数资料
型号: ZXMN4A06KTC
厂商: Diodes Inc
文件页数: 1/8页
文件大小: 0K
描述: MOSFET N-CHAN 40V 10.9A DPAK
其它图纸: D-PAK
D-PAK Pin Out
标准包装: 1
FET 型: MOSFET N 通道,金属氧化物
FET 特点: 逻辑电平门
漏极至源极电压(Vdss): 40V
电流 - 连续漏极(Id) @ 25° C: 7.2A
开态Rds(最大)@ Id, Vgs @ 25° C: 50 毫欧 @ 4.5A,10V
Id 时的 Vgs(th)(最大): 1V @ 250µA
闸电荷(Qg) @ Vgs: 17.1nC @ 10V
输入电容 (Ciss) @ Vds: 827pF @ 20V
功率 - 最大: 2.15W
安装类型: 表面贴装
封装/外壳: TO-252-3,DPak(2 引线+接片),SC-63
供应商设备封装: TO-252-3
包装: 标准包装
产品目录页面: 1472 (CN2011-ZH PDF)
其它名称: ZXMN4A06KDKR
ZXMN4A06K
40V N-channel enhancement mode MOSFET
Summary
V (BR)DSS = -40V; R DS(ON) = 0.05 ; I D = 10.9A
Description
This new generation of trench MOSFETs from Zetex utilizes a unique
structure that combines the benefits of low on-resistance with fast
switching speed. This makes them ideal for high efficiency, low voltage,
power management applications.
Features
D
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Low on-resistance
Fast switching speed
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Low threshold
Low gate drive
DPAK package
G
S
Applications
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DC - DC converters
Audio output stages
Relay and solenoid driving
Motor control
Ordering information
Device
ZXMN4A06KTC
Reel size
(inches)
13
Tape width
(mm)
16
Quantity
per reel
2,500
Device marking
ZXMN
4A06
Pinout - Top view
Issue 1 - March 2006
? Zetex Semiconductors plc 2005
1
www.zetex.com
相关PDF资料
PDF描述
ZXMN6A07FTC MOSFET N-CHAN 60V SOT23-3
ZXMN6A07ZTA MOSFET N-CH 60V 1.9A SOT-89
ZXMN6A08E6TC MOSFET N-CH 60V 2.8A SOT23-6
ZXMN6A08GTA MOSFET N-CH 60V 3.8A SOT223
ZXMN6A08KTC MOSFET N-CH 60V 5.36A DPAK
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ZXMN6A07FTC 功能描述:MOSFET 60V N-Chnl UMOS RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube