参数资料
型号: ZXMN6A07ZTA
厂商: Diodes Inc
文件页数: 1/8页
文件大小: 0K
描述: MOSFET N-CH 60V 1.9A SOT-89
标准包装: 1
FET 型: MOSFET N 通道,金属氧化物
FET 特点: 逻辑电平门
漏极至源极电压(Vdss): 60V
电流 - 连续漏极(Id) @ 25° C: 1.9A
开态Rds(最大)@ Id, Vgs @ 25° C: 250 毫欧 @ 1.8A,10V
Id 时的 Vgs(th)(最大): 3V @ 250µA
闸电荷(Qg) @ Vgs: 3.2nC @ 10V
输入电容 (Ciss) @ Vds: 166pF @ 40V
功率 - 最大: 1.5W
安装类型: 表面贴装
封装/外壳: TO-243AA
供应商设备封装: SOT-89-3
包装: 标准包装
产品目录页面: 1473 (CN2011-ZH PDF)
其它名称: ZXMN6A07ZDKR
ZXMN6A07Z
60V SOT89 N-channel enhancement mode mosfet
Summary
V (BR)DSS
60
Description
R DS(on) ( )
0.250 @ V GS = 10V
0.350 @ V GS = 4.5V
I D (A)
2.5
2.1
D
This new generation trench MOSFET from Zetex utilizes a unique
structure combining the benefits of low on-state resistance with fast
switching speed.
Features
G
S
?
?
?
Low on-resistance
Fast switching speed
Low threshold
?
SOT89 package
S
Applications
D
D
?
?
?
?
DC-DC converters
Power management functions
Relay and solenoid driving
Motor control
Top view
G
Ordering information
Device
ZXMN6A07ZTA
Reel size
(inches)
7
Tape width
(mm)
12
Quantity per
reel
1,000
Device marking
7N6
Issue 8 - January 2007
? Zetex Semiconductors plc 2007
1
www.zetex.com
相关PDF资料
PDF描述
ZXMN6A08E6TC MOSFET N-CH 60V 2.8A SOT23-6
ZXMN6A08GTA MOSFET N-CH 60V 3.8A SOT223
ZXMN6A08KTC MOSFET N-CH 60V 5.36A DPAK
ZXMN6A09DN8TA MOSFET 2N-CH 60V 5.1A 8-SOIC
ZXMN6A09GTA MOSFET N-CH 60V 6.9A SOT223
相关代理商/技术参数
参数描述
ZXMN6A08 制造商:ZETEX 制造商全称:ZETEX 功能描述:60V SOT223 N-channel enhancement mode MOSFET
ZXMN6A08E6 制造商:Diodes Incorporated 功能描述:MOSFET N SOT-23-6 制造商:Diodes Incorporated 功能描述:MOSFET, N, SOT-23-6 制造商:Diodes Incorporated 功能描述:MOSFET, N CH, 60V, 3.5A, SOT-23; Transistor Polarity:N Channel; Continuous Drain Current Id:3.5A; Drain Source Voltage Vds:60V; On Resistance Rds(on):100mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1V; No. of Pins:6 ;RoHS Compliant: Yes
ZXMN6A08E6 制造商:Diodes Incorporated 功能描述:MOSFET N SOT-23-6
ZXMN6A08E6_06 制造商:ZETEX 制造商全称:ZETEX 功能描述:60V N-CHANNEL ENHANCEMENT MODE MOSFET
ZXMN6A08E6QTA 制造商:Diodes Incorporated 功能描述: