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参数资料
| 型号： | ZXMN6A08KTC |
| 厂商： | Diodes Inc |
| 文件页数： | 1/8页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 60V 5.36A DPAK |
| 标准包装： | 1 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 60V |
| 电流 - 连续漏极(Id) @ 25° C： | 5.36A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 80 毫欧 @ 4.8A，10V |
| Id 时的 Vgs(th)（最大）： | 3V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 5.8nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 459pF @ 40V |
| 功率 - 最大： | 2.12W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-252-3，DPak（2 引线+接片），SC-63 |
| 供应商设备封装： | TO-252-3 |
| 包装： | 标准包装 |
| 产品目录页面： | 1473 (CN2011-ZH PDF) |
| 其它名称： | ZXMN6A08KTCDKR |
A Product Line of
Diodes Incorporated
ZXMN6A08K
60V N-CHANNEL ENHANCEMENT MODE MOSFET
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Product Summary
Features and Benefits
V (BR)DSS
R DS(on)
I D
T A = 25 ° C
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Low on-resistance
Fast switching speed
“Green” component and RoHS compliant (Note 1)
80m Ω @ V GS = 10V
7.90A
60V
150m Ω @ V GS = 4.5V
5.75A
Mechanical Data
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Case: TO-252
Description and Applications
This new generation MOSFET has been designed to minimize the on-
state resistance (R DS(on) ) and yet maintain superior switching
performance, making it ideal for high efficiency power management
applications.
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Case Material: Molded Plastic, “Green” Molding Compound. UL
Flammability Classification Rating 94V-0 (Note 1)
Moisture Sensitivity: Level 1 per J-STD-020D
Terminals Connections: See Diagram
Terminals: Matte Tin Finish annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208
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Backlighting
DC-DC Converters
Power management functions
D
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Weight: 0.33 grams (approximate)
D
G
G
D
S
S
TOP VIEW
Ordering Information
(Note 1)
PIN OUT -TOP VIEW
Equivalent Circuit
Product
ZXMN6A08KTC
Marking
See Below
Reel size (inches)
13
Tape width (mm)
16
Quantity per reel
2,500
Note:
1. Diodes, Inc. defines “Green” products as those which are Eu RoHS compliant and contain no halogens or antimony compounds; further information
about Diodes Inc.’s “Green” Policy can be found on our website. For packaging details, go to our website.
Marking Information
ZXMN
6A08
YYWW
ZXMN = Product Type Marking Code, Line 1
6A08 = Product Type Marking Code, Line 2
YYWW = Date Code Marking
YY = Year (ex: 09 = 2009)
WW = Week (01-52)
ZXMN6A08K
Document Revision: 2
1 of 8
www.diodes.com
July 2009
? Diodes Incorporated
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相关代理商/技术参数 |
参数描述 |
|---|---|
| ZXMN6A09DN8 | 制造商:Diodes Incorporated 功能描述:MOSFET DUAL N SO-8 |
| ZXMN6A09DN8(1) | 制造商:未知厂家 制造商全称:未知厂家 功能描述: |
| ZXMN6A09DN8 | 制造商:Diodes Incorporated 功能描述:MOSFET N DUAL SO-8 |
| ZXMN6A09DN8_07 | 制造商:ZETEX 制造商全称:ZETEX 功能描述:60V SO8 N-channel enhancement mode MOSFET |
| ZXMN6A09DN8TA | 功能描述:MOSFET Dl 60V N-Chnl UMOS RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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