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| 型号： | ZXMN6A11ZTA |
| 厂商： | Diodes Inc |
| 文件页数： | 1/7页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 60V 2.4A SOT-89 |
| 标准包装： | 1 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 60V |
| 电流 - 连续漏极(Id) @ 25° C： | 2.7A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 120 毫欧 @ 2.5A，10V |
| Id 时的 Vgs(th)（最大）： | 1V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 5.7nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 330pF @ 40V |
| 功率 - 最大： | 1.5W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-243AA |
| 供应商设备封装： | SOT-89-3 |
| 包装： | 标准包装 |
| 产品目录页面： | 1473 (CN2011-ZH PDF) |
| 其它名称： | ZXMN6A11ZDKR |
A Product Line of
Diodes Incorporated
ZXMN6A11Z
60V N-CHANNEL ENHANCEMENT MODE MOSFET IN SOT89 PACKAGE
Product Summary
Features and Benefits
V (BR)DSS
60V
R DS(on) Max
120m Ω @ V GS = 10V
180m Ω @ V GS = 4.5V
I D max
T A = 25 ° C
(Note 5)
3.6A
2.9A
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Low On-Resistance
Low Threshold
Fast Switching Speed
Low Gate Drive
Lead Free/RoHS Compliant (Note 1)
"Green" Device (Note 2)
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Qualified to AEC-Q101 Standards for High Reliability
Description and Applications
Mechanical Data
This MOSFET has been designed to minimize the on-state resistance
(R DS(on) ) and yet maintain superior switching performance, making it
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Case: SOT89
Case Material: Molded Plastic, “Green” Molding Compound.
ideal for high efficiency power management applications.
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UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
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DC-DC Converters
Power Management functions
Motor control
Disconnect switches
SOT89
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D
Terminals: Matte Tin Finish
Weight: 0.052 grams (approximate)
G
S
Top View
Ordering Information (Note 3)
Device symbol
Top View
Pin-Out
Product
ZXMN6A11ZTA
Marking
11N6
Reel size (inches)
7
Tape width (mm)
12
Quantity per reel
1,000
Notes:
1. No purposefully added lead.
2. Diodes Inc’s “Green” Policy can be found on our website at http://www.diodes.com
3. For packaging details, go to our website at http://www.diodes.com
Marking Information
11N6
11N6 = Product type Marking Code
ZXMN6A11Z
Document number DS33557 Rev. 4 - 2
1 of 7
www.diodes.com
December 2011
? Diodes Incorporated
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相关代理商/技术参数 |
参数描述 |
|---|---|
| ZXMN6A25 | 制造商:ZETEX 制造商全称:ZETEX 功能描述:60V SO8 N-channel enhancement mode MOSFET |
| ZXMN6A25DN8 | 制造商:Diodes Incorporated 功能描述:MOSFET N DUAL SO-8 |
| ZXMN6A25DN8(1) | 制造商:ZETEX 制造商全称:ZETEX 功能描述: |
| ZXMN6A25DN8_06 | 制造商:ZETEX 制造商全称:ZETEX 功能描述:Dual 60V SO8 N-channel enhancement mode MOSFET |
| ZXMN6A25DN8TA | 功能描述:MOSFET Dl 60V N-Chnl UMOS RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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