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| 型号： | ZXMN6A11ZTA |
| 厂商： | Diodes Inc |
| 文件页数： | 3/7页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 60V 2.4A SOT-89 |
| 标准包装： | 1 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 60V |
| 电流 - 连续漏极(Id) @ 25° C： | 2.7A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 120 毫欧 @ 2.5A，10V |
| Id 时的 Vgs(th)（最大）： | 1V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 5.7nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 330pF @ 40V |
| 功率 - 最大： | 1.5W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-243AA |
| 供应商设备封装： | SOT-89-3 |
| 包装： | 标准包装 |
| 产品目录页面： | 1473 (CN2011-ZH PDF) |
| 其它名称： | ZXMN6A11ZDKR |
A Product Line of
Diodes Incorporated
ZXMN6A11Z
Electrical Characteristics @T A = 25°C unless otherwise specified
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current T J = 25°C
Gate-Source Leakage
BV DSS
I DSS
I GSS
60
-
-
-
-
-
-
1.0
100
V
μ A
nA
V GS = 0V, I D = 250 μ A
V DS = 60V, V GS = 0V
V GS = ±20V, V DS = 0V
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-Resistance (Note 7)
Forward Transconductance (Note 7 & 9)
Diodes Forward Voltage (Note 7)
V GS(th)
R DS (ON)
g FS
V SD
1
-
-
-
-
-
-
4.9
0.85
2.2
120
180
-
0.95
V
m Ω
S
V
V DS = V GS , I D = 250 μ A
V GS = 10V, I D = 2.5A
V GS = 4.5V, I D = 2A
V DS = 15V, I D = 2.5A
T J = 25 ° C, I S = 2.8A, V GS = 10V
DYNAMIC CHARACTERISTICS
Input Capacitance (Note 8 & 9)
Output Capacitance (Note 8 & 9)
Reverse Transfer Capacitance (Note 8 & 9)
Gate Charge (Note 8 & 9)
Total Gate Charge (Note 8 & 9)
Gate-Source Charge (Note 8 & 9)
Gate-Drain Charge (Note 8 & 9)
Reverse Recovery Time (Note 9)
Reverse Recovery Charge (Note 9)
Turn-On Delay Time (Note 8 & 9)
Turn-On Rise Time (Note 8 & 9)
Turn-Off Delay Time (Note 8 & 9)
Turn-Off Fall Time (Note 8 & 9)
C iss
C oss
C rss
Q g
Q g
Q gs
Q gd
t rr
Q rr
t D(on)
t r
t D(off)
t f
-
-
-
-
-
-
-
-
-
-
-
330
35.2
17.1
3
5.7
1.25
0.86
21.5
20.5
1.95
3.5
8.2
4.6
-
-
-
-
-
-
-
-
-
-
-
pF
pF
pF
nC
nC
nC
nC
ns
nC
ns
ns
ns
ns
V DS = 40V, V GS = 0V,
f = 1.0MHz
V GS = 5V, V DS = 15V, I D = 2.5A
V GS = 10V, V DS = 15V,
I D = 2.5A
T J = 25 ° C, I S = 2.5A,
di/dt = 100A/ μ s
V GS = 10V, V DD = 30V,
R G = 6 ? , I D = 2.5A
Notes:
7. Measured under pulsed conditions. Pulse width ≤ 300 μ s; duty cycle ≤ 2%.
8. Switching characteristics are independent of operating junction temperature.
9. For design aid only, not subject to production testing.
]
ZXMN6A11Z
Document number DS33557 Rev. 4 - 2
3 of 7
www.diodes.com
December 2011
? Diodes Incorporated
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