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| 型号： | ZXMN6A07ZTA |
| 厂商： | Diodes Inc |
| 文件页数： | 4/8页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 60V 1.9A SOT-89 |
| 标准包装： | 1 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 60V |
| 电流 - 连续漏极(Id) @ 25° C： | 1.9A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 250 毫欧 @ 1.8A，10V |
| Id 时的 Vgs(th)（最大）： | 3V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 3.2nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 166pF @ 40V |
| 功率 - 最大： | 1.5W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-243AA |
| 供应商设备封装： | SOT-89-3 |
| 包装： | 标准包装 |
| 产品目录页面： | 1473 (CN2011-ZH PDF) |
| 其它名称： | ZXMN6A07ZDKR |
ZXMN6A07Z
Electrical characteristics (at T amb = 25°C unless otherwise stated)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Conditions
Static
Drain-source breakdown
V (BR)DSS
60
V
I D = 250 A, V GS =0V
voltage
Zero gate voltage drain current I DSS
1
A
V DS = 60V, V GS =0V
Gate-body leakage
I GSS
100
nA
V GS =±20V, V DS =0V
Gate-source threshold voltage V GS(th)
Static drain-source on-state
R DS(on)
resistance (*)
Forward transconductance (*)(?) g fs
1.0
2.3
3.0
0.250
0.350
V
S
I D = 250 A, V DS =V GS
V GS = 10V, I D = 1.8A
V GS = 4.5V, I D = 1.3A
V DS = 15V, I D = 1.8A
Dynamic (?)
Input capacitance
Output capacitance
Reverse transfer capacitance
C iss
C oss
C rss
166
19.5
8.7
pF
pF
pF
V DS = 40V, V GS =0V
f=1MHz
Switching (?) (?)
Turn-on-delay time
Rise time
Turn-off delay time
t d(on)
t r
t d(off)
1.8
1.4
4.9
ns
ns
ns
V DD = 30V, V GS = 10V
I D = 1.8A
R G ≈ 6.0
Fall time
Total gate charge
t f
Q g
2.0
1.65
ns
V DS = 30V, V GS = 5V
I D = 1.8A
Total gate charge
Gate-source charge
Gate drain charge
Q g
Q gs
Q gd
3.2
0.67
0.82
nC
nC
nC
V DS = 30V, V GS = 10V
I D = 1.8A
Source-drain diode
Diode forward voltage (*)
V SD
0.80
0.95
V
T j =25°C, I S = 0.45A,
V GS =0V
Reverse recovery time (?)
Reverse recovery charge (?)
t rr
Q rr
20.5
21.3
ns
nC
T j =25°C, I F = 1.8A,
di/dt=100A/ s
NOTES:
(*) Measured under pulsed conditions. Pulse width
300 s; duty cycle
2%.
(?) Switching characteristics are independent of operating junction temperature.
(?) For design aid only, not subject to production testing.
Issue 8 - January 2007
? Zetex Semiconductors plc 2007
4
www.zetex.com
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相关代理商/技术参数 |
参数描述 |
|---|---|
| ZXMN6A08 | 制造商:ZETEX 制造商全称:ZETEX 功能描述:60V SOT223 N-channel enhancement mode MOSFET |
| ZXMN6A08E6 | 制造商:Diodes Incorporated 功能描述:MOSFET N SOT-23-6 制造商:Diodes Incorporated 功能描述:MOSFET, N, SOT-23-6 制造商:Diodes Incorporated 功能描述:MOSFET, N CH, 60V, 3.5A, SOT-23; Transistor Polarity:N Channel; Continuous Drain Current Id:3.5A; Drain Source Voltage Vds:60V; On Resistance Rds(on):100mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1V; No. of Pins:6 ;RoHS Compliant: Yes |
| ZXMN6A08E6 | 制造商:Diodes Incorporated 功能描述:MOSFET N SOT-23-6 |
| ZXMN6A08E6_06 | 制造商:ZETEX 制造商全称:ZETEX 功能描述:60V N-CHANNEL ENHANCEMENT MODE MOSFET |
| ZXMN6A08E6QTA | 制造商:Diodes Incorporated 功能描述: |
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