参数资料
型号: 25AA512-I/SM
厂商: Microchip Technology
文件页数: 17/36页
文件大小: 0K
描述: IC EEPROM 512KBIT 20MHZ 8SOIC
标准包装: 90
格式 - 存储器: EEPROMs - 串行
存储器类型: EEPROM
存储容量: 512K (64K x 8)
速度: 20MHz
接口: SPI 3 线串行
电源电压: 1.8 V ~ 5.5 V
工作温度: -40°C ~ 85°C
封装/外壳: 8-SOIC(0.209",5.30mm 宽)
供应商设备封装: 8-SOIJ
包装: 管件
产品目录页面: 1450 (CN2011-ZH PDF)
25AA512
2.10
CHIP ERASE
The CHIP ERASE instruction will erase all bits (FFh) in
the array. A Write Enable ( WREN ) instruction must be
given prior to executing a CHIP ERASE . This is done
by setting CS low and then clocking out the proper
instruction into the 25AA512. After all eight bits of the
instruction are transmitted, the CS must be brought
high to set the write enable latch.
The CHIP ERASE instruction is entered by driving the
CS low, followed by the instruction code (Figure 2-10)
onto the SI line.
The CS pin must be driven high after the eighth bit of
the instruction code has been given or the CHIP
ERASE instruction will not be executed. Once the CS
pin is driven high the self-timed CHIP ERASE instruc-
tion begins. While the device is executing the CHIP
ERASE instruction the WIP bit in the STATUS register
can be read to determine when the CHIP ERASE
instruction is complete.
The CHIP ERASE instruction is ignored if either of the
Block Protect bits (BP0, BP1) are not 0, meaning ?,
?, or all of the array is protected.
FIGURE 2-10:
CHIP ERASE SEQUENCE
CS
0
1
2
3
4
5
6
7
SCK
SI
1
1
0
0
0
1
1
1
High-Impedance
SO
? 2010 Microchip Technology Inc.
DS22021F-page 17
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