参数资料
型号: 25AA512-I/SM
厂商: Microchip Technology
文件页数: 18/36页
文件大小: 0K
描述: IC EEPROM 512KBIT 20MHZ 8SOIC
标准包装: 90
格式 - 存储器: EEPROMs - 串行
存储器类型: EEPROM
存储容量: 512K (64K x 8)
速度: 20MHz
接口: SPI 3 线串行
电源电压: 1.8 V ~ 5.5 V
工作温度: -40°C ~ 85°C
封装/外壳: 8-SOIC(0.209",5.30mm 宽)
供应商设备封装: 8-SOIJ
包装: 管件
产品目录页面: 1450 (CN2011-ZH PDF)
25AA512
2.11
DEEP POWER-DOWN MODE
Deep Power-Down mode of the 25AA512 is its lowest
power consumption state. The device will not respond
to any of the Read or Write commands while in Deep
Power-Down mode, and therefore it can be used as an
additional software write protection feature.
The Deep Power-Down mode is entered by driving CS
low, followed by the instruction code (Figure 2-11) onto
the SI line, followed by driving CS high.
If the CS pin is not driven high after the eighth bit of the
instruction code has been given, the device will not
execute Deep power-down. Once the CS line is driven
high there is a delay (T DP ) before the current settles to
its lowest consumption.
All instructions given during Deep Power-Down mode
are ignored except the Read Electronic Signature
command (RDID). The RDID command will release
the device from Deep power-down and outputs the
electronic signature on the SO pin, and then returns
the device to Standby mode after delay (T REL )
Deep Power-Down mode automatically releases at
device power-down. Once power is restored to the
device it will power-up in the Standby mode.
FIGURE 2-11:
DEEP POWER-DOWN SEQUENCE
CS
0
1
2
3
4
5
6
7
SCK
SI
1
0
1
1
1
0
0
1
High-Impedance
SO
DS22021F-page 18
? 2010 Microchip Technology Inc.
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