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参数资料
| 型号： | 2N5551UB1 |
| 厂商： | STMICROELECTRONICS |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 160 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封装： | ROHS COMPLIANT, HERMETIC SEALED, CERAMIC, LCC-3 |
| 文件页数： | 3/10页 |
| 文件大小： | 280K |
| 代理商： | 2N5551UB1 |
Electrical ratings
2N5551HR
2/10
Doc ID 16935 Rev 3
1
Electrical ratings
Table 2.
Absolute maximum ratings
Symbol
Parameter
Value
Unit
VCBO
Collector-base voltage (IE = 0)
180
V
VCEO
Collector-emitter voltage (IB = 0)
160
V
VEBO
Emitter-base voltage (IC = 0)
6
V
IC
Collector current
for 2N5551HR
for SOC5551HRB
0.6
0.5
A
PTOT
Total dissipation at Tamb ≤ 25 °C
for 2N5551HR
for SOC5551HRB
for SOC5551HRB (1)
Total dissipation at Tc ≤ 25 °C
for 2N5551HR
1.
When mounted on a 8 x 10 x 0.6 mm ceramic substrate.
0.36
0.58
1.2
W
TSTG
Storage temperature
-65 to 200
°C
TJ
Max. operating junction temperature
200
°C
Table 3.
Thermal data for through-hole package
Symbol
Parameter
Value
Unit
RthJC
Thermal resistance junction-case
__
max
146
°C/W
RthJA
Thermal resistance junction-ambient
__
max
486
°C/W
Table 4.
Thermal data for SMD package
Symbol
Parameter
Value
Unit
RthJA
Thermal resistance junction-ambient
__
max
486
°C/W
Thermal resistance junction-ambient (1) __
max
1.
When mounted on a 8 x 10 x 0.6 mm ceramic substrate.
302
°C/W
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相关代理商/技术参数 |
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| 2N5551-X-AB3-R | 制造商:UTC-IC 制造商全称:UTC-IC 功能描述:HIGH VOLTAGE SWITCHING TRANSISTOR |
| 2N5551-X-T92-B | 制造商:UTC-IC 制造商全称:UTC-IC 功能描述:HIGH VOLTAGE SWITCHING TRANSISTOR |
| 2N5551-X-T92-K | 制造商:UTC-IC 制造商全称:UTC-IC 功能描述:HIGH VOLTAGE SWITCHING TRANSISTOR |
| 2N5551YBU | 功能描述:两极晶体管 - BJT NPN Transistor General Purpose RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2N5551YIUTA | 功能描述:功率放大器 TO-92 RoHS:否 制造商:TriQuint Semiconductor 封装 / 箱体: 工作电源电压:28 V 电源电流:2.5 A 工作温度范围: 封装: |
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