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参数资料
| 型号： | 2N5551UB1 |
| 厂商： | STMICROELECTRONICS |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 160 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封装： | ROHS COMPLIANT, HERMETIC SEALED, CERAMIC, LCC-3 |
| 文件页数： | 4/10页 |
| 文件大小： | 280K |
| 代理商： | 2N5551UB1 |
2N5551HR
Electrical characteristics
Doc ID 16935 Rev 3
3/10
2
Electrical characteristics
Tcase = 25 °C unless otherwise specified.
Table 5.
Electrical characteristics
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
ICBO
Collector-base cut-off
current (IE = 0)
VCB = 120 V
TC = 150 °C
-
50
nA
A
IEBO
Emitter-base cut-off
current (IC = 0)
VEB = 4 V
-
50
nA
V(BR)CBO
Collector-base
breakdown voltage
(IE = 0)
IC = 100 A
180
-
V
V(BR)CEO
(1)
1.
Pulsed duration = 300 s, duty cycle
≤ 1.5%
Collector-emitter
breakdown voltage
(IB = 0)
IC = 1 mA
160
-
V
V(BR)EBO
Emitter-base
breakdown voltage
(IC = 0)
IE = 10 A
6
-
V
VCE(sat)
(1)
Collector-emitter
saturation voltage
IC = 10 mA
IB = 1 mA
IC = 50 mA
IB = 5 mA
-
0.15
0.2
V
VBE(sat)
(1)
Base-emitter
saturation voltage
IC = 10 mA
IB = 1 mA
IC = 50 mA
IB = 5 mA
-
1
V
hFE
(1)
DC current gain
IC = 1 mA
VCE = 5 V
IC = 10 mA
VCE = 5 V
IC = 50 mA
VCE = 5 V
IC = 10 mA
VCE = 5 V
Tamb = - 55 °C
80
30
20
-
250
hfe
Small signal current
gain
VCE = 10 V
IC = 1 mA
f = 1 kHz
50
-
200
hfe
Small signal current
gain
VCE = 10 V
IC = 10 mA
f > 100 MHz
1-
Cobo
Output capacitance
(IE = 0)
VCB = 10 V
f = 1 MHz
-
6
pF
Cebo
Emitter-base
capacitance (IC = 0)
VEB = 5 V
f = 1 MHz
-
20
pF
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相关代理商/技术参数 |
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| 2N5551-X-AB3-R | 制造商:UTC-IC 制造商全称:UTC-IC 功能描述:HIGH VOLTAGE SWITCHING TRANSISTOR |
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| 2N5551YIUTA | 功能描述:功率放大器 TO-92 RoHS:否 制造商:TriQuint Semiconductor 封装 / 箱体: 工作电源电压:28 V 电源电流:2.5 A 工作温度范围: 封装: |
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