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| 型号： | 2N6609G |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | 功率晶体管 |
| 英文描述： | 16 A, 140 V, PNP, Si, POWER TRANSISTOR, TO-204AA |
| 封装： | CASE 1-07, TO-3, 2 PIN |
| 文件页数： | 1/4页 |
| 文件大小： | 124K |
| 代理商： | 2N6609G |
Semiconductor Components Industries, LLC, 2004
July, 2004 Rev. 10
45
Publication Order Number:
2N3773/D
NPN 2N3773*, PNP 2N6609
Preferred Device
Complementary Silicon
Power Transistors
The 2N3773 and 2N6609 are PowerBase
t power transistors
designed for high power audio, disk head positioners and other linear
applications. These devices can also be used in power switching
circuits such as relay or solenoid drivers, DCDC converters or
inverters.
Features
PbFree Packages are Available**
High Safe Operating Area (100% Tested) 150 W @ 100 V
Completely Characterized for Linear Operation
High DC Current Gain and Low Saturation Voltage
hFE = 15 (Min) @ 8.0 A, 4.0 V
VCE(sat) = 1.4 V (Max) @ IC = 8.0 A, IB = 0.8 A
For Low Distortion Complementary Designs
MAXIMUM RATINGS (Note 1)
Rating
Symbol
Value
Unit
Collector Emitter Voltage
VCEO
140
Vdc
Collector Emitter Voltage
VCEX
160
Vdc
Collector Base Voltage
VCBO
160
Vdc
Emitter Base Voltage
VEBO
7
Vdc
Collector Current
Continuous
Peak (Note 2)
IC
16
30
Adc
Base Current
Continuous
Peak (Note 2)
IB
4
15
Adc
Total Power Dissipation @ TA = 25°C
Derate above 25
°C
PD
150
0.855
W
W/
°C
Operating and Storage Junction
Temperature Range
TJ, Tstg
65 to +200
°C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits
are exceeded, device functional operation is not implied, damage may occur
and reliability may be affected.
1. Indicates JEDEC Registered Data.
2. Pulse Test: Pulse Width = 5 ms, Duty Cycle
v 10%.
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance,
JunctiontoCase
RqJC
1.17
°C/W
**For additional information on our PbFree strategy and soldering details,
please download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
TO204
CASE 107
*Preferred devices are recommended choices for future
use and best overall value.
See detailed ordering and shipping information in the package
dimensions section on page 46 of this data sheet.
ORDERING INFORMATION
http://onsemi.com
MARKING
DIAGRAM
16 A COMPLEMENTARY
POWER TRANSISTORS
140 V, 150 W
2Nxxxx
MEX
AYYWW
xxxx
= 3773 or 6609
A
= Assembly Location
YY
= Year
WW
= Work Week
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| 2N6660B-1 | 1100 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-205AD |
| 2N6660B-2 | 1100 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-205AD |
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相关代理商/技术参数 |
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|---|---|
| 2N661 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:alloy-junction germanium transistors |
| 2N6617 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | NPN | 16V V(BR)CEO | 10MA I(C) | MICRO-X |
| 2N6618 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | NPN | 16V V(BR)CEO | 10MA I(C) | SOT-100VAR |
| 2N6619 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | NPN | 12V V(BR)CEO | 30MA I(C) | TO-236 |
| 2N662 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:alloy-junction germanium transistors |
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