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参数资料
| 型号： | 2N6609G |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | 功率晶体管 |
| 英文描述： | 16 A, 140 V, PNP, Si, POWER TRANSISTOR, TO-204AA |
| 封装： | CASE 1-07, TO-3, 2 PIN |
| 文件页数： | 3/4页 |
| 文件大小： | 124K |
| 代理商： | 2N6609G |
NPN 2N3773*, PNP 2N6609
http://onsemi.com
47
V
CE
,COLLECT
OREMITTER
VOL
TAGE
(VOL
TS)
V
CE
,COLLECT
OREMITTER
VOL
TAGE
(VOL
TS)
300
0.2
Figure 10. DC Current Gain
IC, COLLECTOR CURRENT (AMPS)
5.0
0.3
0.5 0.7 1.0
2.0
3.0
5.0
20
50
30
20
100
70
h
FE
,DC
CURRENT
GAIN
150
°C
25
°C
55
°C
VCE = 4 V
NPN
PNP
IC, COLLECTOR CURRENT (AMPS)
h
FE
,DC
CURRENT
GAIN
7.0
10
200
7.0
10
Figure 11. DC Current Gain
150
°C
25
°C
55
°C
Figure 12. Collector Saturation Region
2.0
0.05
IB, BASE CURRENT (AMPS)
0
0.07 0.1
0.2
0.3
0.5 0.7 1.0
2.0 3.0
1.6
1.2
0.8
0.4
TC = 25°C
IC = 4 A
IC = 16 A
Figure 13. Collector Saturation Region
2.0
IB, BASE CURRENT (AMPS)
0
1.6
1.2
0.8
0.4
TC = 25°C
2.0
0.2
IC, COLLECTOR CURRENT (AMPS)
0.3
0.5 0.7 1.0
2.0 3.0
5.0 7.0
20
1.2
0.4
0
IC/IB = 10
VBE(sat)
V,
VOL
TAGE
(VOL
TS)
Figure 14. “On” Voltage
1.6
0.8
10
150
°C
25
°C
VCE(sat)
25
°C
2.0
IC, COLLECTOR CURRENT (AMPS)
1.2
0.4
IC/IB = 10
VBE(sat)
V,
VOL
TAGE
(VOL
TS)
Figure 15. “On” Voltage
1.6
0.8
150
°C
25
°C
VCE(sat)
150
°C
25
°C
VCE = 4 V
IC = 4 A
IC = 8 A
0.2 0.3
0.5 0.7 1.0
2.0
3.0
5.0
20
7.0
10
300
5.0
50
30
20
100
70
7.0
10
200
IC = 8 A
0.05 0.07 0.1
0.2
0.3
0.5 0.7
1.0
2.0 3.0
5.0
IC = 16 A
0.2 0.3
0.5 0.7 1.0
2.0 3.0
5.0 7.0
20
10
150
°C
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