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参数资料
| 型号： | 2N7000,126 |
| 厂商： | NXP SEMICONDUCTORS |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 300 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92 |
| 封装： | PLASTIC, SPT, TO-92 VARIANT, SC-43, 3 PIN |
| 文件页数： | 1/13页 |
| 文件大小： | 263K |
| 代理商： | 2N7000,126 |
2N7000
N-channel enhancement mode eld-effect transistor
Rev. 03 — 19 May 2000
Product specication
c
1.
Description
N-channel enhancement mode eld-effect transistor in a plastic package using
TrenchMOS1 technology.
Product availability:
2N7000 in SOT54 (TO-92 variant).
2.
Features
s TrenchMOS technology
s Very fast switching
s Logic level compatible.
3.
Applications
s Relay driver
s High speed line driver
s Logic level translator.
4.
Pinning information
1.
TrenchMOS is a trademark of Royal Philips Electronics.
Table 1:
Pinning - SOT54, simplied outline and symbol
Pin
Description
Simplied outline
Symbol
1
drain (d)
SOT54 (TO-92 variant)
N-channel MOSFET
2
gate (g)
3
source (s)
32 1
03ab40
d
g
s
03ab30
相关PDF资料 |
PDF描述 |
|---|---|
| 2N7000AMO | 300 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92 |
| 0580-0186-25 | Power Magnetics |
| 0580-0186-50 | Power Magnetics |
| 0580-0256-25 | Power Magnetics |
| 0580-0296-20 | Power Magnetics |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2N7000-18 | 制造商:Vishay Intertechnologies 功能描述:TO226 VNDS06 |
| 2N7000A | 制造商:KEC 制造商全称:KEC(Korea Electronics) 功能描述:FIELD EFFECT TRANSISTOR |
| 2N7000AMO | 制造商:NXP Semiconductors 功能描述:300 MA, 60 V, N-CHANNEL, SI, SMALL SIGNAL, MOSFET, TO-92, SOT54 VARIANT |
| 2N7000-AP | 制造商:Micro Commercial Components (MCC) 功能描述:Trans MOSFET N-CH 60V 0.3A 3-Pin TO-92 Ammo |
| 2N7000BU | 功能描述:MOSFET 60V N-Channel Sm Sig RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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