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参数资料
| 型号： | 2N7000,126 |
| 厂商： | NXP SEMICONDUCTORS |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 300 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92 |
| 封装： | PLASTIC, SPT, TO-92 VARIANT, SC-43, 3 PIN |
| 文件页数： | 13/13页 |
| 文件大小： | 263K |
| 代理商： | 2N7000,126 |
Philips Semiconductors
2N7000
N-channel enhancement mode eld-effect transistor
Product specication
Rev. 03 — 19 May 2000
9 of 13
9397 750 07153
Philips Electronics N.V. 2000. All rights reserved.
9.
Package outline
Fig 14. SOT54 (TO-92 variant).
UNIT
A
REFERENCES
OUTLINE
VERSION
EUROPEAN
PROJECTION
ISSUE DATE
IEC
JEDEC
EIAJ
mm
5.2
5.0
b
0.48
0.40
c
0.45
0.40
D
4.8
4.4
d
1.7
1.4
E
4.2
3.6
L
14.5
12.7
e
2.54
e1
1.27
L1
(1)
2.5
b1
0.66
0.56
DIMENSIONS (mm are the original dimensions)
Note
1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities.
SOT54
TO-92
SC-43
97-02-28
A
L
0
2.5
5 mm
scale
b
c
D
b1
L1
d
E
Plastic single-ended leaded (through hole) package; 3 leads
SOT54
e1
e
1
2
3
相关PDF资料 |
PDF描述 |
|---|---|
| 2N7000AMO | 300 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92 |
| 0580-0186-25 | Power Magnetics |
| 0580-0186-50 | Power Magnetics |
| 0580-0256-25 | Power Magnetics |
| 0580-0296-20 | Power Magnetics |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2N7000-18 | 制造商:Vishay Intertechnologies 功能描述:TO226 VNDS06 |
| 2N7000A | 制造商:KEC 制造商全称:KEC(Korea Electronics) 功能描述:FIELD EFFECT TRANSISTOR |
| 2N7000AMO | 制造商:NXP Semiconductors 功能描述:300 MA, 60 V, N-CHANNEL, SI, SMALL SIGNAL, MOSFET, TO-92, SOT54 VARIANT |
| 2N7000-AP | 制造商:Micro Commercial Components (MCC) 功能描述:Trans MOSFET N-CH 60V 0.3A 3-Pin TO-92 Ammo |
| 2N7000BU | 功能描述:MOSFET 60V N-Channel Sm Sig RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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