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参数资料
| 型号： | 2N7000,126 |
| 厂商： | NXP SEMICONDUCTORS |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 300 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92 |
| 封装： | PLASTIC, SPT, TO-92 VARIANT, SC-43, 3 PIN |
| 文件页数： | 10/13页 |
| 文件大小： | 263K |
| 代理商： | 2N7000,126 |
Philips Semiconductors
2N7000
N-channel enhancement mode eld-effect transistor
Product specication
Rev. 03 — 19 May 2000
6 of 13
9397 750 07153
Philips Electronics N.V. 2000. All rights reserved.
Tj =25 °CTj =25 °C and 150 °C; VDS ≥ ID × RDSon
Fig 5.
Output characteristics: drain current as a
function of drain-source voltage; typical values.
Fig 6.
Transfer characteristics: drain current as a
function of gate-source voltage; typical values.
Tj =25 °C
Fig 7.
Drain-source on-state resistance as a function
of drain current; typical values.
Fig 8.
Normalized drain source on-state resistance
factor as a function of junction temperature.
03aa04
0
0.2
0.4
0.6
0.8
1
0
0.4
0.8
1.2
1.6
2
3.5 V
Tj = 25
o
C
4 V
4.5 V
3 V
V
DS
(V)
I
D
(A)
V
GS
= 10 V
03aa06
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0123
4567
VDS> IDX RDSon
Tj = 25
o
C
150
o
C
I
D
(A)
V
GS
(V)
03aa05
0
1
2
3
4
5
6
7
8
9
10
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
Tj = 25
o
C
4.5 V
4 V
3.5V
3 V
R
DSon
(
)
V
GS
= 10 V
I
D
(A)
03aa28
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
2.2
-60
-20
20
60
100
140
180
T
j
(
o
C)
a
a
R
DSon
R
DSon 25 C
°
()
----------------------------
=
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