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参数资料
| 型号： | 2N7000,126 |
| 厂商： | NXP SEMICONDUCTORS |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 300 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92 |
| 封装： | PLASTIC, SPT, TO-92 VARIANT, SC-43, 3 PIN |
| 文件页数： | 9/13页 |
| 文件大小： | 263K |
| 代理商： | 2N7000,126 |
Philips Semiconductors
2N7000
N-channel enhancement mode eld-effect transistor
Product specication
Rev. 03 — 19 May 2000
5 of 13
9397 750 07153
Philips Electronics N.V. 2000. All rights reserved.
8.
Characteristics
Table 5:
Characteristics
Tj =25 °C unless otherwise specied
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Static characteristics
V(BR)DSS
drain-source breakdown
voltage
ID =10 A; VGS =0V
Tj =25 °C60
75
V
Tj = 55 °C55
V
VGS(th)
gate-source threshold voltage ID = 1 mA; VDS =VGS;
Tj =25 °C1
2
V
Tj = 150 °C
0.6
V
Tj = 55 °C
3.5
V
IDSS
drain-source leakage current
VDS = 48 V; VGS =0V
Tj =25 °C
0.01
1.0
A
Tj = 150 °C
10
A
IGSS
gate-source leakage current
VGS = ±15 V; VDS =0V
10
100
nA
RDSon
drain-source on-state
resistance
VGS =10V; ID = 500 mA;
Tj =25 °C
2.8
5
Tj = 150 °C
9.25
VGS = 4.5 V; ID =75mA;
Tj =25 °C
3.8
5.3
Dynamic characteristics
gfs
forward transconductance
VDS = 10 V; ID = 200 mA;
100
300
mS
Ciss
input capacitance
VGS =0V; VDS =10V;
f = 1 MHz; Figure 12
25
40
pF
Coss
output capacitance
18
30
pF
Crss
reverse transfer capacitance
7.5
10
pF
ton
turn-on time
VDD = 50 V; RD = 250 ;
VGS =10V; RG =50 ;
RGS =50
310
ns
toff
turn-off time
12
15
ns
Source-drain diode
VSD
source-drain (diode forward)
voltage
IS = 300 mA; VGS =0V;
0.85
1.5
V
trr
reverse recovery time
IS = 300 mA;
dIS/dt = 100 A/s;
VGS =0V; VDS =25V
30
ns
Qr
recovered charge
30
nC
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