参数资料
型号: 2N7000,126
厂商: NXP SEMICONDUCTORS
元件分类: 小信号晶体管
英文描述: 300 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92
封装: PLASTIC, SPT, TO-92 VARIANT, SC-43, 3 PIN
文件页数: 7/13页
文件大小: 263K
代理商: 2N7000,126
Philips Semiconductors
2N7000
N-channel enhancement mode eld-effect transistor
Product specication
Rev. 03 — 19 May 2000
3 of 13
9397 750 07153
Philips Electronics N.V. 2000. All rights reserved.
VGS ≥ 4.5 V
Fig 1.
Normalized total power dissipation as a
function of ambient temperature.
Fig 2.
Normalized continuous drain current as a
function of ambient temperature.
Tamb =25 °C; IDM is single pulse.
Fig 3.
Safe operating area; continuous and peak drain currents as a function of drain-source voltage.
03aa11
0
20
40
60
80
100
120
0
25
50
75
100
125
150
175
P
der
(%)
T
amb
(
o
C)
03aa19
0
20
40
60
80
100
120
0
25
50
75
100
125
150
175
I
der
(%)
T
amb
(
o
C)
P
der
P
tot
P
tot 25 C
°
()
----------------------
100%
×
=
I
der
I
D
I
D25 C
°
()
-------------------
100%
×
=
03aa02
0.01
0.1
1
10
1
10
100
D.C.
100 ms
10 ms
1 ms
tp= 10 s
100
s
tp
T
P
t
T
δ =
T
amb
= 25
o
C
R
DSon
= V
DS
/ I
D
V
DS
(V)
I
D
(A)
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