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| 型号： | 2N7002DW-7 |
| 厂商： | Diodes Inc |
| 文件页数： | 2/5页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CHANEL DUAL 60V SOT-363 |
| 标准包装： | 1 |
| FET 型： | 2 个 N 沟道（双） |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 60V |
| 电流 - 连续漏极(Id) @ 25° C： | 115mA |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 7.5 欧姆 @ 50mA，5V |
| Id 时的 Vgs(th)（最大）： | 2V @ 250µA |
| 输入电容 (Ciss) @ Vds： | 50pF @ 25V |
| 功率 - 最大： | 200mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 6-TSSOP，SC-88，SOT-363 |
| 供应商设备封装： | SOT-363 |
| 包装： | 剪切带 (CT) |
| 其它名称： | 2N7002DWDICT |
2N7002DW
Maximum Ratings (@T A = +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Drain-Gate Voltage R GS ≤ 1.0M Ω
Symbol
V DSS
V DGR
Value
60
60
Units
V
V
Gate-Source Voltage
Continuous
Pulsed
V GSS
V GSS
±20
±40
V
V
Continuous Drain Current (Note 7) V GS = 5V
Steady
State
T A = +25 ° C
T A = +70 ° C
T A = +100 ° C
I D
0.23
0.18
0.14
A
Maximum Continuous Body Diode Forward Current (Note 7)
Pulsed Drain Current (10μs pulse, duty cycle = 1%)
I S
I DM
0.53
0.8
A
A
Thermal Characteristics (@T A = +25°C, unless otherwise specified.)
Characteristic
T A = +25°C
Symbol
Value
0.31
Units
Total Power Dissipation (Note 6)
T A = +70°C
P D
0.2
W
T A = +100°C
0.12
Thermal Resistance, Junction to Ambient (Note 6)
Steady state
R θ JA
410
°C/W
T A = +25°C
0.4
Total Power Dissipation (Note 7)
T A = +70°C
P D
0.25
W
T A = +100°C
0.15
Thermal Resistance, Junction to Ambient (Note 7)
Thermal Resistance, Junction to Case (Note 7)
Operating and Storage Temperature Range
Steady state
Steady state
R θ JA
R θ JC
T J, T STG
318
135
-55 to +150
°C/W
°C/W
°C
Electrical Characteristics (@T A = +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
BV DSS
60
70
?
V
V GS = 0V, I D = 10μA
Zero Gate Voltage Drain Current
Gate-Body Leakage
@ T C = +25°C
@ T C = +125°C
I DSS
I GSS
?
?
?
?
1.0
500
±10
μA
nA
V DS = 60V, V GS = 0V
V GS = ±20V, V DS = 0V
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
V GS(th)
1.0
?
2.0
V
V DS = V GS , I D = 250μA
Static Drain-Source On-Resistance
On-State Drain Current
Forward Transconductance
Diode Forward Voltage
@ T J = +25°C
@ T J = +125°C
R DS (ON)
I D(ON)
g FS
V SD
?
0.5
80
?
3.2
4.4
1.0
?
0.78
7.5
13.5
?
?
1.5
Ω
A
mS
V
V GS = 5.0V, I D = 0.05A
V GS = 10V, I D = 0.5A
V GS = 10V, V DS = 7.5V
V DS =10V, I D = 0.2A
V GS = 0V, I S = 115mA
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
C iss
C oss
C rss
?
?
?
22
11
2.0
50
25
5.0
pF
pF
pF
V DS = 25V, V GS = 0V
f = 1.0MHz
SWITCHING CHARACTERISTICS (Note 9)
Turn-On Delay Time
t D(on)
?
7.0
20
V DD = 30V, I D = 0.2A,
Turn-Off Delay Time
t D(off)
?
11.0
20
ns
R L = 150 Ω , V GEN = 10V,
R GEN = 25 Ω
Notes:
6. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
7. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal vias to bottom layer 1inch square copper plate.
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to product testing.
2N7002DW
Document number: DS30120 Rev. 16 - 2
2 of 5
www.diodes.com
November 2013
? Diodes Incorporated
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2N7002DW-7-F | 功能描述:MOSFET 60V 200mW RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| 2N7002DW-7-F-79 | 制造商:DIODES 功能描述:Dual N-Channel Mosfet / SOT-363 (LEADFREE) |
| 2N7002DWA-7 | 制造商:Diodes Incorporated 功能描述:MOSF N CH DL 60V 180MA SOT363 制造商:Diodes Incorporated 功能描述:Dual N-Ch 60V Enh 8Ohm at 5V VGS |
| 2N7002DW-CUT TAPE | 制造商:FAIRCHILD 功能描述:2N7002DW Series 60 V 7.5 Ohms N-Channel Enhancement Mode Field Effect Transistor |
| 2N7002DWG-AL6-R | 制造商:UTC-IC 制造商全称:UTC-IC 功能描述:300m Amps, 60 Volts DUAL N-CHANNEL POWER MOSFET |
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