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参数资料
| 型号： | 2N7002TRL13 |
| 厂商： | NXP SEMICONDUCTORS |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 180 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 文件页数： | 10/12页 |
| 文件大小： | 76K |
| 代理商： | 2N7002TRL13 |
April 1995
7
Philips Semiconductors
Product specication
N-channel vertical D-MOS transistor
2N7002
Fig.9
Temperature coefficient of drain-source
on-resistance;
typical RDS(on).
k
R
DS on
() at Tj
R
DS on
() at 25 °C
----------------------------------------------
=
(1) ID = 500 mA; VGS = 10 V.
(2) ID = 75 mA; VGS = 4.5 V.
handbook, halfpage
50
0
50
k
Tj (°C)
150
2.4
0.4
2
100
1.6
1.2
0.8
MDA695
(1)
(2)
Fig.10 Temperature coefficient of gate-source
threshold voltage;
typical VGS(th) at 1 mA.
k
V
GS th
() at Tj
V
GS th
() at 25 °C
---------------------------------------------
=
handbook, halfpage
50
0
50
k
Tj (°C)
150
1.2
0.7
1.1
100
1
0.9
0.8
MDA696
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2N7002T-TP | 制造商:Micro Commercial Components (MCC) 功能描述:Trans MOSFET N-CH 60V 0.115A 3-Pin SOT-523 T/R |
| 2N7002V | 功能描述:MOSFET N-Chan Enhancement Mode Field Effect RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| 2N7002V_1 | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
| 2N7002V_10 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:N-Channel Enhancement Mode Field Effect Transistor |
| 2N7002V-7 | 功能描述:MOSFET 60V 150mW RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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