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参数资料
| 型号： | 2N7002TRL13 |
| 厂商： | NXP SEMICONDUCTORS |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 180 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 文件页数： | 5/12页 |
| 文件大小： | 76K |
| 代理商： | 2N7002TRL13 |
April 1995
2
Philips Semiconductors
Product specication
N-channel vertical D-MOS transistor
2N7002
FEATURES
Direct interface to C-MOS, TTL,
etc.
High-speed switching
No secondary breakdown.
DESCRIPTION
N-channel enhancement mode
vertical D-MOS transistor in a SOT23
envelope. It is designed for use as a
Surface Mounted Device (SMD) in
thin and thick-film circuits, with
applications in relay, high-speed and
line transformer drivers.
PINNING - SOT23
PIN
DESCRIPTION
1
gate
2
source
3
drain
QUICK REFERENCE DATA
PIN CONFIGURATION
SYMBOL
PARAMETER
CONDITIONS
MAX.
UNIT
VDS
drain-source voltage
60
V
ID
drain current
DC value
180
mA
RDS(on)
drain-source on-resistance
ID = 500 mA
VGS = 10 V
5
VGS(th)
gate-source threshold
voltage
ID = 1 mA
VGS =VDS
3V
Fig.1 Simplified outline and symbol.
Marking code: 702
ook, halfpage
MSB003
Top view
12
3
handbook, 2 columns
s
d
g
MBB076 - 1
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PDF描述 |
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| 2N7236R1 | 18 A, 100 V, 0.2 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-254AA |
| 2N7221R1 | 10 A, 400 V, 0.55 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA |
| 2N7237 | 11 A, 200 V, 0.51 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-254AA |
| 2N6800SM | 3 A, 400 V, 1 ohm, N-CHANNEL, Si, POWER, MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2N7002T-TP | 制造商:Micro Commercial Components (MCC) 功能描述:Trans MOSFET N-CH 60V 0.115A 3-Pin SOT-523 T/R |
| 2N7002V | 功能描述:MOSFET N-Chan Enhancement Mode Field Effect RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| 2N7002V_1 | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
| 2N7002V_10 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:N-Channel Enhancement Mode Field Effect Transistor |
| 2N7002V-7 | 功能描述:MOSFET 60V 150mW RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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