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参数资料
| 型号： | 2N7002TRL13 |
| 厂商： | NXP SEMICONDUCTORS |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 180 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 文件页数： | 7/12页 |
| 文件大小： | 76K |
| 代理商： | 2N7002TRL13 |
April 1995
4
Philips Semiconductors
Product specication
N-channel vertical D-MOS transistor
2N7002
CHARACTERISTICS
Tj = 25 °C unless otherwise specied.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX. UNIT
V(BR)DSS
drain-source breakdown voltage
ID = 10 A
VGS =0
60
90
V
IDSS
drain-source leakage current
VDS = 48 V
VGS =0
1
A
±IGSS
gate-source leakage current
VDS = 0
±VGS = 15 V
10
nA
VGS(th)
gate-source threshold voltage
ID = 1 mA
VGS =VDS
0.8
3V
RDS(on)
drain-source on-resistance
ID = 500 mA
VGS = 10 V
3.5
5
ID = 75 mA
VGS = 4.5 V
5.3
Y
fs
transfer admittance
ID = 200 mA
VDS = 10 V
100
200
mS
Ciss
input capacitance
VDS = 10 V
VGS =0
f = 1 MHz
25
40
pF
Coss
output capacitance
VDS = 10 V
VGS =0
f = 1 MHz
22
30
pF
Crss
feedback capacitance
VDS = 10 V
VGS =0
f = 1 MHz
610
pF
Switching times (see Figs 2 and 3)
ton
turn-on time
ID = 200 mA
VDD =50V
VGS = 0 to 10 V
10
ns
toff
turn-off time
ID = 200 mA
VDD =50V
VGS = 0 to 10 V
15
ns
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2N7002T-TP | 制造商:Micro Commercial Components (MCC) 功能描述:Trans MOSFET N-CH 60V 0.115A 3-Pin SOT-523 T/R |
| 2N7002V | 功能描述:MOSFET N-Chan Enhancement Mode Field Effect RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| 2N7002V_1 | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
| 2N7002V_10 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:N-Channel Enhancement Mode Field Effect Transistor |
| 2N7002V-7 | 功能描述:MOSFET 60V 150mW RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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