参数资料
型号: 2N7002TRL13
厂商: NXP SEMICONDUCTORS
元件分类: 小信号晶体管
英文描述: 180 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
文件页数: 8/12页
文件大小: 76K
代理商: 2N7002TRL13
April 1995
5
Philips Semiconductors
Product specication
N-channel vertical D-MOS transistor
2N7002
Fig.2 Switching time test circuit.
handbook, halfpage
MSA631
50
VDD = 50 V
ID
10 V
0 V
Fig.3 Input and output waveforms.
handbook, halfpage
MBB692
10 %
90 %
10 %
ton
toff
OUTPUT
INPUT
Fig.4 Power derating curve.
(1) On ceramic substrate.
(2) On printed circuit board.
handbook, halfpage
0
300
200
100
0
50
100
200
150
MLA223
Ptot
(mW)
Tamb (°C)
(1)
(2)
Fig.5 Typical output characteristics; Tj =25 °C.
handbook, halfpage
04
8
VDS (V)
ID
(A)
16
1.6
1.2
0.4
0
0.8
12
MDA697
VGS = 10 V
6 V
5 V
4 V
3 V
相关PDF资料
PDF描述
2N7221 10 A, 400 V, 0.55 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA
2N7236R1 18 A, 100 V, 0.2 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-254AA
2N7221R1 10 A, 400 V, 0.55 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA
2N7237 11 A, 200 V, 0.51 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-254AA
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相关代理商/技术参数
参数描述
2N7002T-TP 制造商:Micro Commercial Components (MCC) 功能描述:Trans MOSFET N-CH 60V 0.115A 3-Pin SOT-523 T/R
2N7002V 功能描述:MOSFET N-Chan Enhancement Mode Field Effect RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
2N7002V_1 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
2N7002V_10 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:N-Channel Enhancement Mode Field Effect Transistor
2N7002V-7 功能描述:MOSFET 60V 150mW RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube