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参数资料
| 型号： | 2N7002TRL13 |
| 厂商： | NXP SEMICONDUCTORS |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 180 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 文件页数： | 6/12页 |
| 文件大小： | 76K |
| 代理商： | 2N7002TRL13 |
April 1995
3
Philips Semiconductors
Product specication
N-channel vertical D-MOS transistor
2N7002
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
Notes
1. Mounted on a ceramic substrate measuring 10
× 8 × 0.7 mm.
2. Mounted on a printed circuit board.
THERMAL RESISTANCE
Notes
1. Mounted on a ceramic substrate measuring 10
× 8 × 0.7 mm.
2. Mounted on a printed circuit board.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VDS
drain-source voltage
60
V
±VGSO
gate-source voltage
open drain
40
V
ID
drain current
DC value
180
mA
IDM
drain current
peak value
800
mA
Ptot
total power dissipation
Tamb = 25 °C
(note 1)
(note 2)
300
250
mW
Tstg
storage temperature range
65
150
°C
Tj
junction temperature
150
°C
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-a
from junction to ambient
note 1
note 2
430
500
K/W
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2N7002T-TP | 制造商:Micro Commercial Components (MCC) 功能描述:Trans MOSFET N-CH 60V 0.115A 3-Pin SOT-523 T/R |
| 2N7002V | 功能描述:MOSFET N-Chan Enhancement Mode Field Effect RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| 2N7002V_1 | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
| 2N7002V_10 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:N-Channel Enhancement Mode Field Effect Transistor |
| 2N7002V-7 | 功能描述:MOSFET 60V 150mW RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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